TP65H070LDG-TR

650 V 25 A GAN FET
Mfr. Part Number
TP65H070LDG-TR
Manufacturer
Transphorm
Package / Case
3-PowerDFN
Datasheet
Description
650 V 25 A GAN FET
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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TP65H070LDG-TR
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In Stock7,950
Unit
Price
$13.43
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Reference Price
QuantityPrice
1$ 13.4300
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-09-20 · Valid as reference until 2026-09-27 · Request RFQ for live stock.
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Specification Summary

Package / Case
3-PowerDFN
Supplier Device Package
3-PQFN (8x8)
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Type
N-Channel
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-09-20. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drain to Source Voltage (Vdss)
650 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
Power Dissipation (Max)
96W (Tc)
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Supplier Device Package
3-PQFN (8x8)
Technology
GaNFET (Gallium Nitride)
Package / Case
3-PowerDFN
650 V 25 A GAN FET
Brand Introduction

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

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