TP65H035G4WSQA

650 V 46.5 GAN FET
Mfr. Part Number
TP65H035G4WSQA
Manufacturer
Transphorm
Package / Case
TO-247-3
Datasheet
Description
650 V 46.5 GAN FET
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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TP65H035G4WSQA
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In Stock9,647
Unit
Price
$21.04
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Reference Price
QuantityPrice
1$ 21.0400
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-09-20 · Valid as reference until 2026-09-27 · Request RFQ for live stock.
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Specification Summary

Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
47.2A (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
FET Type
N-Channel
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-09-20. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
47.2A (Tc)
Drain to Source Voltage (Vdss)
650 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Power Dissipation (Max)
187W (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Supplier Device Package
TO-247-3
Technology
GaNFET (Gallium Nitride)
Package / Case
TO-247-3
650 V 46.5 GAN FET
Brand Introduction

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

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