TPD3215M

GANFET 2N-CH 600V 70A MODULE
Mfr. Part Number
TPD3215M
Manufacturer
Transphorm
Package / Case
Module
Datasheet
Description
GANFET 2N-CH 600V 70A MODULE
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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TPD3215M
Transphorm
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In Stock8,122
Unit
Price
$175.13
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Reference Price
QuantityPrice
1$ 175.1300
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-11-08 · Valid as reference until 2026-11-15 · Request RFQ for live stock.
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Specification Summary

Package / Case
Module
Supplier Device Package
Module
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Half Bridge)
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-11-08. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drain to Source Voltage (Vdss)
600V
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id
-
Power - Max
470W
Supplier Device Package
Module
Package / Case
Module
GANFET 2N-CH 600V 70A MODULE
Brand Introduction

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

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Open RFQ with quantity and target date, or upload a BOM that includes TPD3215M. We reply with stock, channel note, reference price and ETA.

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