EPC2110ENGRT

GAN TRANS 2N-CH 120V BUMPED DIE
Mfr. Part Number
EPC2110ENGRT
Manufacturer
EPC
Package / Case
Die
Datasheet
Description
GAN TRANS 2N-CH 120V BUMPED DIE
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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EPC2110ENGRT
EPC
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In Stock9,471
Unit
Price
$2.37
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Reference Price
QuantityPrice
1$ 2.3700
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-11-08 · Valid as reference until 2026-11-15 · Request RFQ for live stock.
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Specification Summary

Package / Case
Die
Supplier Device Package
Die
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
3.4A
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Dual) Common Source
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-11-08. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
3.4A
Drain to Source Voltage (Vdss)
120V
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 700µA
Power - Max
-
Supplier Device Package
Die
Package / Case
Die
GAN TRANS 2N-CH 120V BUMPED DIE
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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Buying FAQ — EPC2110ENGRT

How do I buy EPC2110ENGRT from Yingxinyuan?

Open RFQ with quantity and target date, or upload a BOM that includes EPC2110ENGRT. We reply with stock, channel note, reference price and ETA.

Is the listed price final?

Prices on the product page are reference only. Confirm unit price, currency and validity via RFQ before placing a PO.

How fresh is the stock figure?

Stock and reference price show an as-of date on the page. Ask for a live confirm — allocation lines can change daily.

How do you source authentic parts?

We source from manufacturers, franchised distributors and verified independents, then inspect incoming lots. See /anti-counterfeit/.

What is a typical lead time?

In-stock lines often ship within 24–48 hours after confirmation. Sourcing / allocation ETAs are quoted per line — see /lead-time-shipping/.