RMD7N40DN

MOSFET 2 N-CH 40V 7A /20A 8-DFN
Mfr. Part Number
RMD7N40DN
Manufacturer
Rectron USA
Package / Case
8-PowerWDFN
Datasheet
Description
MOSFET 2 N-CH 40V 7A /20A 8-DFN
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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RMD7N40DN
Rectron USA
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In Stock1,039
Unit
Price
$0.24
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Reference Price
QuantityPrice
1$ 0.2400
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-09-22 · Valid as reference until 2026-09-29 · Request RFQ for live stock.
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Specification Summary

Package / Case
8-PowerWDFN
Supplier Device Package
8-DFN (3x3)
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
7A (Ta), 20A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Feature
Standard
FET Type
2 N-Channel (Dual)
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-09-22. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss)
40V
FET Feature
Standard
FET Type
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
720pF @ 20V
Rds On (Max) @ Id, Vgs
20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Power - Max
1.9W (Ta), 12W (Tc)
Supplier Device Package
8-DFN (3x3)
Package / Case
8-PowerWDFN
MOSFET 2 N-CH 40V 7A /20A 8-DFN
Brand Introduction

Rectron Limited was established in 1976 by an experienced team of semiconductor engineers. Rectron quickly emerged as a recognized supplier of high-quality discrete semiconductors. In 1985, Rectron opened wholly owned subsidiaries in the USA, London and Hong Kong. They have since enhanced their competitive advantage and increased manufacturing capacity of discrete products.

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