Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing PN Junction Semiconductor Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 38
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 P3M06300T3 PN Junction Semiconductor | 15V | +20V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 9A | 650 V | - | N-Channel | - | - | 35W | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | TO-220-2L | SiCFET (Silicon Carbide) | TO-220-2 | 7,262 | ||
P3M06300D5 PN Junction Semiconductor | 15V | +20V, -8V | Surface Mount | -55°C ~ 175°C (TJ) | 9A | 650 V | - | N-Channel | - | - | 26W | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | DFN5*6 | SiCFET (Silicon Carbide) | DFN5*6 | 8,400 | ||
P1H06300D8 PN Junction Semiconductor | 6V | +10V, -20V | Surface Mount | -55°C ~ 150°C (TJ) | 10A | 650 V | - | N-Channel | - | - | 55.5W | 1.3V @ 1mA | - | DFN8*8 | GaNFET (Gallium Nitride) | - | 1,218 | ||
P3M06300D8 PN Junction Semiconductor | 15V | +20V, -8V | Surface Mount | -55°C ~ 175°C (TJ) | 9A | 650 V | - | N-Channel | - | - | 32W | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | DFN8*8 | SiCFET (Silicon Carbide) | DFN8*8 | 6,889 | ||
P3M06300K3 PN Junction Semiconductor | 15V | +20V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 9A | 650 V | - | N-Channel | 904 nC @ 15 V | 338 pF @ 400 V | 38W | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA (Typ) | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 2,791 | ||
P3M173K0K3 PN Junction Semiconductor | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 4A | 1700 V | - | N-Channel | - | - | 63W | 3.6Ohm @ 0.6A, 15V | 2.2V @ 0.6mA (Typ) | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 1,288 | ||
P3M173K0T3 PN Junction Semiconductor | 1 $5.0800 | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 4A | 1700 V | - | N-Channel | - | - | 75W | 2.6Ohm @ 0.6A, 15V | 2.2V @ 0.6mA (Typ) | TO-220-2L | SiCFET (Silicon Carbide) | TO-220-2 | 6,066 | |
P3M173K0F3 PN Junction Semiconductor | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 1.97A | 1700 V | - | N-Channel | - | - | 19W | 3.6Ohm @ 0.25A, 15V | 2.2V @ 1.5mA (Typ) | TO-220F-2L | SiCFET (Silicon Carbide) | TO-220F-2 | 7,470 | ||
P3M171K2K3 PN Junction Semiconductor | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 6A | 1700 V | - | N-Channel | - | - | 68W | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 4,347 | ||
P3M171K0G7 PN Junction Semiconductor | 1 $6.1000 | 15V | +19V, -8V | Surface Mount | -55°C ~ 175°C (TJ) | 7A | 1700 V | - | N-Channel | - | - | 100W | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | D2PAK-7 | SiCFET (Silicon Carbide) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 2,280 | |
P3M171K0T3 PN Junction Semiconductor | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 6A | 1700 V | - | N-Channel | - | - | 100W | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | TO-220-2L | SiCFET (Silicon Carbide) | TO-220-2 | 6,362 | ||
P3M171K0K3 PN Junction Semiconductor | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 6A | 1700 V | - | N-Channel | - | - | 68W | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 5,968 | ||
P3M171K0F3 PN Junction Semiconductor | 15V | +19V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 5.5A | 1700 V | - | N-Channel | - | - | 51W | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | TO-220F-2L | SiCFET (Silicon Carbide) | TO-220F-2 | 9,756 | ||
P3M12160K3 PN Junction Semiconductor | 1 $8.8300 | 15V | +21V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 19A | 1200 V | - | N-Channel | - | - | 110W | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 9,538 | |
P3M12160K4 PN Junction Semiconductor | 15V | +21V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 19A | 1200 V | - | N-Channel | - | - | 110W | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | TO-247-4L | SiCFET (Silicon Carbide) | TO-247-4 | 9,920 | ||
P3M06120K3 PN Junction Semiconductor | 15V | +20V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 27A | 650 V | - | N-Channel | - | - | 131W | 158mOhm @ 10A, 15V | 2.2V @ 5mA | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 1,985 | ||
P3M06120K4 PN Junction Semiconductor | 15V | +20V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 27A | 650 V | - | N-Channel | - | - | 131W | 158mOhm @ 10A, 15V | 2.2V @ 5mA | TO-247-4L | SiCFET (Silicon Carbide) | TO-247-4 | 6,165 | ||
P3M06120T3 PN Junction Semiconductor | 15V | +20V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 29A | 650 V | - | N-Channel | - | - | 153W | 158mOhm @ 10A, 15V | 2.2V @ 5mA (Typ) | TO-220-2L | SiCFET (Silicon Carbide) | TO-220-2 | 5,872 | ||
P3M06060L8 PN Junction Semiconductor | 15V | +20V, -8V | Surface Mount | -55°C ~ 175°C (TJ) | 40A | 650 V | - | N-Channel | - | - | 188W | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | TOLL | SiCFET (Silicon Carbide) | TOLL | 3,710 | ||
P3M06060K3 PN Junction Semiconductor | 15V | +20V, -8V | Through Hole | -55°C ~ 175°C (TJ) | 48A | 650 V | - | N-Channel | - | - | 188W | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | TO-247-3L | SiCFET (Silicon Carbide) | TO-247-3 | 5,957 |