Mfr. Part Number
P3M171K0K3
Manufacturer
PN Junction Semiconductor
Package / Case
TO-247-3
Datasheet
Description
SICFET N-CH 1700V 6A TO-247-3
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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P3M171K0K3
PN Junction Semiconductor
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In Stock5,968
Unit
Price
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Reference Price
QuantityPrice
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-11-08 · Valid as reference until 2026-11-15 · Request RFQ for live stock.
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Specification Summary

Package / Case
TO-247-3
Supplier Device Package
TO-247-3L
Drain to Source Voltage (Vdss)
1700 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
6A
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
FET Type
N-Channel
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-11-08. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Drive Voltage (Max Rds On, Min Rds On)
15V
Vgs (Max)
+19V, -8V
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
6A
Drain to Source Voltage (Vdss)
1700 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power Dissipation (Max)
68W
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 15V
Vgs(th) (Max) @ Id
2.2V @ 2mA (Typ)
Supplier Device Package
TO-247-3L
Technology
SiCFET (Silicon Carbide)
Package / Case
TO-247-3
SICFET N-CH 1700V 6A TO-247-3
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

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Buying FAQ — P3M171K0K3

How do I buy P3M171K0K3 from Yingxinyuan?

Open RFQ with quantity and target date, or upload a BOM that includes P3M171K0K3. We reply with stock, channel note, reference price and ETA.

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In-stock lines often ship within 24–48 hours after confirmation. Sourcing / allocation ETAs are quoted per line — see /lead-time-shipping/.