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P1H06300D8
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Reference price and stock shown as of 2026-11-08. Confirm live availability and unit price via RFQ before placing a PO.

P1H06300D8

GANFET N-CH 650V 10A DFN 8X8
PN Junction Semiconductor · Transistors - FETs, MOSFETs - Single · BOM Matching
Mfr. Part Number
P1H06300D8
Manufacturer
PN Junction Semiconductor
Package / Case
DFN8*8
Datasheet
Datasheet
Description
GANFET N-CH 650V 10A DFN 8X8
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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P1H06300D8
PN Junction Semiconductor
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In Stock1,218
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Price
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Reference Price
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Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-11-08 · Valid as reference until 2026-11-15 · Request RFQ for live stock.
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Specification Summary

Supplier Device Package
DFN8*8
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
6V
Current - Continuous Drain (Id) @ 25°C
10A
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Type
N-Channel
Power Dissipation (Max)
55.5W
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-11-08. Confirm live availability and unit price via RFQ before placing a PO.
Lead time FAQ Authenticity FAQ MOQ FAQ
Specifications
Product Description
Purchase & Inquiry
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs (Max)
+10V, -20V
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
10A
Drain to Source Voltage (Vdss)
650 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power Dissipation (Max)
55.5W
Rds On (Max) @ Id, Vgs
1.3V @ 1mA
Vgs(th) (Max) @ Id
-
Supplier Device Package
DFN8*8
Technology
GaNFET (Gallium Nitride)
Package / Case
-
GANFET N-CH 650V 10A DFN 8X8
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

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Buying FAQ — P1H06300D8

Answer-first notes for stock, authenticity, lead time and quoting. Marked up as FAQPage.

How do I buy P1H06300D8 from Yingxinyuan?

Open RFQ with quantity and target date, or upload a BOM that includes P1H06300D8. We reply with stock, channel note, reference price and ETA.

Is the listed price final?

Prices on the product page are reference only. Confirm unit price, currency and validity via RFQ before placing a PO.

How fresh is the stock figure?

Stock and reference price show an as-of date on the page. Ask for a live confirm — allocation lines can change daily.

How do you source authentic parts?

We source from manufacturers, franchised distributors and verified independents, then inspect incoming lots. See /anti-counterfeit/.

What is a typical lead time?

In-stock lines often ship within 24–48 hours after confirmation. Sourcing / allocation ETAs are quoted per line — see /lead-time-shipping/.
BOM matching · Anti-counterfeit · Lead time & shipping

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