SD215DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO
Mfr. Part Number
SD215DE TO-72 4L
Manufacturer
Linear Integrated Systems, Inc.
Package / Case
TO-206AF, TO-72-4 Metal Can
Datasheet
Description
HIGH SPEED N-CHANNEL LATERAL DMO
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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SD215DE TO-72 4L
Linear Integrated Systems, Inc.
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In Stock7,642
Unit
Price
$6.13
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Reference Price
QuantityPrice
1$ 6.1300
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-09-20 · Valid as reference until 2026-09-27 · Request RFQ for live stock.
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Specification Summary

Package / Case
TO-206AF, TO-72-4 Metal Can
Supplier Device Package
TO-72-4
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
5V, 25V
Current - Continuous Drain (Id) @ 25°C
50mA (Ta)
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Through Hole
FET Type
N-Channel
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-09-20. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Drive Voltage (Max Rds On, Min Rds On)
5V, 25V
Vgs (Max)
+30V, -25V
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C
50mA (Ta)
Drain to Source Voltage (Vdss)
20 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power Dissipation (Max)
300mW (Ta)
Rds On (Max) @ Id, Vgs
45Ohm @ 1mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1µA
Supplier Device Package
TO-72-4
Technology
MOSFET (Metal Oxide)
Package / Case
TO-206AF, TO-72-4 Metal Can
HIGH SPEED N-CHANNEL LATERAL DMO
Brand Introduction

Linear Systems is a designer, manufacturer and seller of precision, high-performance, small-signal discrete semiconductors. A Silicon Valley company founded in 1987, it produces ultra-low-noise, monolithic dual and single JFETs and bipolar transistors, along with high-speed DMOS switches, small-signal MOSFETs, ultra-low leakage diodes and BiFET amplifiers. These parts have been designed into world-class products in the areas of: Test & Measurement, Audio, Scientific Optical, Military Sensor; Industrial Controls; and Hybrids.

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