IV1Q12050T3

SIC MOSFET, 1200V 50MOHM, TO-247
Mfr. Part Number
IV1Q12050T3
Manufacturer
Inventchip Technology
Package / Case
TO-247-3
Datasheet
Description
SIC MOSFET, 1200V 50MOHM, TO-247
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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IV1Q12050T3
Inventchip Technology
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In Stock5,050
Unit
Price
$39.28
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Reference Price
QuantityPrice
1$ 39.2800
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-11-05 · Valid as reference until 2026-11-12 · Request RFQ for live stock.
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Specification Summary

Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
FET Type
N-Channel
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-11-05. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs (Max)
+20V, -5V
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drain to Source Voltage (Vdss)
1200 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
2770 pF @ 800 V
Power Dissipation (Max)
327W (Tc)
Rds On (Max) @ Id, Vgs
65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.2V @ 6mA
Supplier Device Package
TO-247-3
Technology
SiCFET (Silicon Carbide)
Package / Case
TO-247-3
SIC MOSFET, 1200V 50MOHM, TO-247
Brand Introduction

Inventchip Technology Co., Ltd. is a high-tech semiconductor company, focusing on the product development of Silicon Carbide (SiC) power devices, gate driver ICs and power management controller ICs. Founded in July 2017, their headquarters is located in Shanghai, China and its SiC fab factory is located at Zhejiang Province.

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