WNSC2D30650CWQ

DUAL SILICON CARBIDE SCHOTTKY DI
Mfr. Part Number
WNSC2D30650CWQ
Manufacturer
WeEn Semiconductors Co., Ltd
Package / Case
TO-247-3
Datasheet
Description
DUAL SILICON CARBIDE SCHOTTKY DI
RoHS Status
Lead Free / RoHS Complaint
Availability
Sourcing — Lead time quoted on request (often 3–15 business days by channel)
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WNSC2D30650CWQ
WeEn Semiconductors Co., Ltd
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In Stock6,634
Unit
Price
$6.86
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Reference Price
QuantityPrice
1$ 6.8600
Prices are for reference only. The final transaction is subject to confirmation.
As of 2026-09-20 · Valid as reference until 2026-09-27 · Request RFQ for live stock.
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Specification Summary

Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Voltage - DC Reverse (Vr) (Max)
650 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 15 A
Current - Average Rectified (Io) (per Diode)
30A
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Operating Temperature - Junction
175°C
Mounting Type
Through Hole
Full specifications are listed below. Need alternates or BOM matching? Read BOM guide · Request a quote
Stock status: Sourcing — Lead time quoted on request (often 3–15 business days by channel)
Shortage / allocation / EOL lines may need longer — ask via RFQ.
Reference price and stock shown as of 2026-09-20. Confirm live availability and unit price via RFQ before placing a PO.
Specifications
Product Description
Purchase & Inquiry
Diode Configuration
1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)
30A
Mounting Type
Through Hole
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Diode Type
Silicon Carbide Schottky
Operating Temperature - Junction
175°C
Reverse Recovery Time (trr)
0 ns
Voltage - DC Reverse (Vr) (Max)
650 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 15 A
Speed
No Recovery Time > 500mA (Io)
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
DUAL SILICON CARBIDE SCHOTTKY DI
Brand Introduction

WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconductors is registered at Nanchang city which is the capital city of Jiangxi province, China. It fully owns subsidiaries and branches in Jilin city for bipolar production, in Shanghai and the United Kingdom for R&D and production support, in Hong Kong for Sales activities, and in many other countries for sales and customer services, respectively.

As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing.

The NXP Bi-Polar Division product portfolio (Diodes, Thyristors & Transistors) has been transferred to WeEn Semiconductors (Jan 19, 2017).

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Buying FAQ — WNSC2D30650CWQ

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