
Gate Drivers
Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.
Sourcing Diodes Incorporated Gate Drivers: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 90
| Product | Pricing | Datasheet | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Input Type | Mounting Type | Operating Temperature | Voltage - Supply | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() DGD0506AM10-13 Diodes Incorporated | 1 $0.2370 100 $0.1896 500 $0.1580 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 0.8V, 2.4V | 1.5A, 2A | 50 V | 17ns, 12ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 8V ~ 14V | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP | 10,000 | |
![]() ZXGD3003E6TA Diodes Incorporated | 1 $0.6200 | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | - | 5A, 5A | - | 8.9ns, 8.9ns | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 40V (Max) | SOT-23-6 | SOT-23-6 | 8,139 | |
![]() ZXGD3006E6QTA Diodes Incorporated | 1 $0.7200 | Low-Side | Single | 1 | IGBT, SiC MOSFET | - | 10A, 10A | - | 48ns, 35ns | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 40V (Max) | SOT-23-6 | SOT-26 | 8,031 | |
![]() ZXGD3002E6TA Diodes Incorporated | 1 $0.8000 | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | - | 9A, 9A | - | 8.3ns, 10.8ns | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 20V (Max) | SOT-23-6 | SOT-23-6 | 5,735 | |
![]() ZXGD3004E6TA Diodes Incorporated | 1 $0.8000 | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | - | 8A, 8A | - | 13.4ns, 12.4ns | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 40V (Max) | SOT-23-6 | SOT-23-6 | 3,586 | |
![]() DGD05473FN-7 Diodes Incorporated | 1 $0.8500 | Half-Bridge | Independent | 2 | N-Channel MOSFET | 0.8V, 2.4V | 1.5A, 2.5A | 50 V | 16ns, 12ns | CMOS/TTL | Surface Mount | -40°C ~ 125°C (TA) | 0.3V ~ 60V | 10-WFDFN Exposed Pad | W-DFN3030-10 | 8,724 | |
![]() DGD05463FN-7 Diodes Incorporated | 1 $0.8800 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 0.8V, 2.4V | 1.5A, 2.5A | 50 V | 17ns, 12ns | CMOS/TTL | Surface Mount | -40°C ~ 125°C (TA) | 4.5V ~ 14V | 10-WFDFN Exposed Pad | W-DFN3030-10 | 4,864 | |
![]() ZXGD3006E6TA Diodes Incorporated | 1 $0.3587 100 $0.2869 500 $0.2391 | Low-Side | Single | 1 | IGBT, SiC MOSFET | - | 10A, 10A | - | 48ns, 35ns | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 40V (Max) | SOT-23-6 | SOT-26 | 2,000 | |
![]() DGD0211CWT-7 Diodes Incorporated | 1 $0.6800 | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.4V | 1.9A, 1.8A | - | 15ns, 15ns | Inverting, Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 4.5V ~ 18V | SOT-23-5 Thin, TSOT-23-5 | TSOT-25 | 8,016 | |
![]() DGD0506AFN-7 Diodes Incorporated | 1 $0.8900 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 0.8V, 2.4V | 1.5A, 2A | 50 V | 17ns, 12ns | CMOS/TTL | Surface Mount | -40°C ~ 125°C (TA) | 8V ~ 14V | 10-WFDFN Exposed Pad | W-DFN3030-10 | 2,800 | |
![]() DGD2103MS8-13 Diodes Incorporated | 1 $1.1900 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | Inverting, Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3,662 | |
![]() DGD2190MS8-13 Diodes Incorporated | 1 $1.7800 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 4.5A, 4.5A | 600 V | 25ns, 20ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 9,397 | |
![]() DGD2113S16-13 Diodes Incorporated | 1 $2.6000 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600 V | 15ns, 13ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 16-SOIC (0.295", 7.50mm Width) | 16-SO | 5,970 | |
![]() DGD1503S8-13 Diodes Incorporated | 1 $1.0500 | Half-Bridge | Independent | 2 | N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 250 V | 70ns, 35ns | Inverting, Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 8,532 | |
![]() DGD2110S16-13 Diodes Incorporated | 1 $1.1528 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 500 V | 15ns, 13ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 16-SOIC (0.295", 7.50mm Width) | 16-SO | 6,720 | |
![]() DGD21904S14-13 Diodes Incorporated | 1 $1.1550 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 4.5A, 4.5A | 600 V | 25ns, 20ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 14-SOIC (0.154", 3.90mm Width) | 14-SO | 2,542 | |
![]() DGD2101S8-13 Diodes Incorporated | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 4,425 | ||
![]() DGD0636S28-13 Diodes Incorporated | Half-Bridge | 3-Phase | 6 | N-Channel MOSFET | 0.8V, 2.4V | 200mA, 350mA | 100 V | 90ns, 35ns | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 28-SOIC (0.295", 7.50mm Width) | 28-SO | 7,384 | ||
![]() DGD23892S28-13 Diodes Incorporated | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 0.8V, 2.4V | 350mA, 650mA | 600 V | 40ns, 25ns | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 15V | 28-SOIC (0.295", 7.50mm Width) | 28-SO | 1,716 | ||
![]() DGD2012S8-13 Diodes Incorporated | Half-Bridge | Independent | 2 | N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 200 V | 40ns, 20ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 4,261 |







