Gate Drivers
Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.
Sourcing ROHM Semiconductor Gate Drivers: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 15
| Product | Pricing | Datasheet | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Input Type | Mounting Type | Operating Temperature | Voltage - Supply | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 BS2101F-E2 ROHM Semiconductor | 1 $1.6000 | High-Side or Low-Side | Synchronous | 2 | IGBT, N-Channel MOSFET | 1V, 2.6V | 60mA, 130mA | 600 V | 60ns, 20ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 18V | 8-SOIC (0.173", 4.40mm Width) | 8-SOP | 6,441 | |
 BS2132F-E2 ROHM Semiconductor | 1 $3.3700 | High-Side | 3-Phase | 3 | IGBT, N-Channel MOSFET | 0.8V, 2.6V | - | 600 V | 125ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 11.5V ~ 20V | 28-SOIC (0.295", 7.50mm Width) | 28-SOP | 6,294 | |
 BD2270HFV-TR ROHM Semiconductor | 1 $1.8500 | High-Side | Single | 1 | N-Channel MOSFET | - | - | - | 130µs, 18µs | Non-Inverting | Surface Mount | -25°C ~ 85°C (TA) | 2.7V ~ 5.5V | SOT-665 | 5-HVSOF | 5,403 | |
 BM60212FV-CE2 ROHM Semiconductor | 1 $5.3900 | High-Side and Low-Side | Synchronous | 2 | IGBT, N-Channel MOSFET | 0.8V, 2V | 4.5A, 3.9A | 1200 V | 50ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 24V | 20-SSOP (0.240", 6.10mm Width) | 20-SSOP-BW | 1,920 | |
BM60213FV-CE2 ROHM Semiconductor | 1 $5.3900 | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2V | 4.5A, 3.9A | 1200 V | 50ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 125°C | 10V ~ 24V | 20-SSOP (0.240", 6.10mm Width) | 20-SSOP-BW | 1,705 | |
 BD2320EFJ-LAE2 ROHM Semiconductor | 1 $3.0100 | High-Side and Low-Side | Independent | 2 | N-Channel MOSFET | 1.7V, 1.5V | 3.5A, 4.5A | 100 V | 8ns, 6ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 7.5V ~ 14.5V | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-HTSOP-J | 2,809 | |
 BD2310G-TR ROHM Semiconductor | 1 $1.4600 | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | - | 4A, 4A | - | 10ns, 10ns | Non-Inverting | Surface Mount | -40°C ~ 125°C | 4.5V ~ 18V | SC-74A, SOT-753 | 5-SSOP | 6,884 | |
BS2100F-E2 ROHM Semiconductor | 1 $1.2500 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6,247 | |
BD16950EFV-CE2 ROHM Semiconductor | 1 $6.4600 | Half-Bridge | Independent | 2 | N-Channel MOSFET | - | - | - | - | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 3V ~ 5.5V | 24-VSSOP (0.220", 5.60mm Width) Exposed Pad | 24-HTSSOP-B | 2,901 | |
BM6103FV-CE2 ROHM Semiconductor | Low-Side | - | 1 | IGBT, N-Channel, P-Channel MOSFET | - | - | - | 50ns, 50ns | Inverting, Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 4.5 ~ 5.5V | 20-LSSOP (0.240", 6.10mm Width) | 20-SSOP-B | 8,683 | ||
 BD6562FV-LBE2 ROHM Semiconductor | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | - | 600mA, 600mA | - | - | Non-Inverting | Surface Mount | -25°C ~ 150°C (TJ) | 10V ~ 25V | 16-LSSOP (0.173", 4.40mm Width) | 16-SSOP-B | 3,336 | ||
BD6563FV-LBE2 ROHM Semiconductor | Low-Side | Independent | 3 | IGBT, N-Channel, P-Channel MOSFET | - | 600mA, 600mA | - | - | Non-Inverting | Surface Mount | -25°C ~ 150°C (TJ) | 10V ~ 25V | 16-LSSOP (0.173", 4.40mm Width) | 16-SSOP-B | 7,231 | ||
BS2103F-E2 ROHM Semiconductor | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 1V, 2.6V | 60mA, 130mA | 600 V | 200ns, 100ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 18V | 8-SOIC (0.173", 4.40mm Width) | 8-SOP | 5,997 | ||
BS2114F-E2 ROHM Semiconductor | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.6V | - | 600 V | 30ns, 30ns | Inverting | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 20V | 8-SOIC (0.173", 4.40mm Width) | 8-SOP | 6,385 | ||
BD2270HFV-LBTR ROHM Semiconductor | 1 $1.6100 | High-Side | Single | 1 | N-Channel MOSFET | - | - | - | 130µs, 18µs | Non-Inverting | Surface Mount | -25°C ~ 85°C (TA) | 2.7V ~ 5.5V | SOT-665 | 5-HVSOF | 2,958 |