Gate Drivers

Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.
Sourcing Power Integrations Gate Drivers: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 219
ProductPricingDatasheetDriven ConfigurationChannel TypeNumber of DriversGate TypeLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)High Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Input TypeMounting TypeOperating TemperatureVoltage - SupplyPackage / CaseSupplier Device PackageStock & Quantity
2SC0108T2H0-17
Power Integrations
1
$56.3700
Datasheet
High-Side or Low-SideIndependent2IGBT-8A, 8A1200 V17ns, 15ns-Surface Mount-40°C ~ 85°C (TA)14.5V ~ 15.5VModuleModule
6,432
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2SC0108T2F1-17
Power Integrations
1
$56.3700
Datasheet
High-Side or Low-SideIndependent2IGBT-8A, 8A1700 V17ns, 15ns-Surface Mount-40°C ~ 85°C (TA)14.5V ~ 15.5VModuleModule
9,544
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1SP0335V2M1-MBN1200H45E2-H
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A4500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
7,742
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1SP0335V2M1-5SNA0400J650100
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
9,810
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1SP0335V2M1-FZ400R65KE3
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
6,821
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1SP0335V2M1-5SNA1200G450300
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A4500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
3,677
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1SP0335V2M1-MBN750H65E2
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
5,924
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1SP0335V2M1-CM600HG-130H
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
8,587
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1SP0335V2M1-5SNA0600G650100
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
6,163
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1SP0335V2M1-FZ600R65KE3
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
4,054
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1SP0335V2M1-FZ250R65KE3
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
9,784
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1SP0335V2M1-5SNA0750G650300
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
8,757
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1SP0335V2M1-FZ750R65KE3
Power Integrations
1
$202.2083
Datasheet
High-Side or Low-SideSingle1IGBT-35A, 35A6500 V9ns, 30ns-Chassis Mount-40°C ~ 85°C23.5V ~ 26.5VModuleModule
4,436
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2SD316EI-12
Power Integrations
Datasheet
Half-Bridge-2IGBT, N-Channel, P-Channel MOSFET-18A, 18A---Chassis Mount-40°C ~ 85°C (TA)15VModuleModule
6,310
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2SD316EI-17
Power Integrations
Datasheet
Half-Bridge-2IGBT, N-Channel, P-Channel MOSFET-18A, 18A---Chassis Mount-40°C ~ 85°C (TA)15VModuleModule
3,107
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6SD106EI
Power Integrations
Datasheet
Low-SideSynchronous6IGBT, N-Channel MOSFET---100ns, 80nsInvertingThrough Hole-40°C ~ 85°C (TJ)0V ~ 16V68-DIP Module, 58 LeadsModule
4,606
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6SD106EI-17
Power Integrations
Datasheet
Low-SideSynchronous6IGBT, N-Channel MOSFET---100ns, 80nsInvertingThrough Hole-40°C ~ 85°C (TJ)0V ~ 16V68-DIP Module, 58 LeadsModule
3,707
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IGD616
Power Integrations
Datasheet
High-Side or Low-SideSingle1IGBT, N-Channel, P-Channel MOSFET0.9V, 3.8V16A, 16A-100ns, 80ns-Through Hole-40°C ~ 85°C (TA)14V ~ 16V36-DIP Module, 24 LeadsModule
3,717
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IHD260
Power Integrations
Datasheet
Half-BridgeIndependent2IGBT, N-Channel MOSFET---100ns, 80ns-Through Hole-40°C ~ 85°C (TA)14V ~ 16V36-DIP Module, 24 LeadsModule
6,465
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IHD660
Power Integrations
Datasheet
Half-BridgeIndependent2IGBT, N-Channel MOSFET---100ns, 80ns-Through Hole-40°C ~ 85°C (TA)14V ~ 16V36-DIP Module, 24 LeadsModule
2,173
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