Gate Drivers
Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.
Sourcing Intersil (Renesas Electronics Corporation) Gate Drivers: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 877
| Product | Pricing | Datasheet | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Input Type | Mounting Type | Operating Temperature | Voltage - Supply | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ISL6208IRZ-T Intersil (Renesas Electronics Corporation) | 1 $1.0855 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 0.5V, 2V | 2A, 2A | 33 V | 8ns, 8ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 5.5V | 8-VQFN Exposed Pad | 8-QFN (3x3) | 4,655 | |
 ICL7667CPA Intersil (Renesas Electronics Corporation) | - | Independent | 2 | N-Channel MOSFET | 0.8V, 2V | - | - | 20ns, 20ns | Inverting | Through Hole | 0°C ~ 70°C (TA) | 4.5V ~ 15V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 8,892 | ||
EL7242CN Intersil (Renesas Electronics Corporation) | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 10ns, 10ns | Inverting, Non-Inverting | Through Hole | -40°C ~ 125°C (TJ) | 4.5V ~ 16V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 3,337 | ||
 EL7242CS Intersil (Renesas Electronics Corporation) | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 10ns, 10ns | Inverting, Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 16V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3,357 | ||
EL7252CN Intersil (Renesas Electronics Corporation) | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 10ns, 10ns | Inverting | Through Hole | -40°C ~ 125°C (TJ) | 4.5V ~ 16V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 5,777 | ||
 EL7457CL Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2V | 2A, 2A | - | 13.5ns, 13ns | Non-Inverting | Surface Mount | -40°C ~ 85°C (TA) | 4.5V ~ 18V | 16-VQFN Exposed Pad | 16-QFN (4x4) | 8,814 | ||
 EL7457CS Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2V | 2A, 2A | - | 13.5ns, 13ns | Non-Inverting | Surface Mount | -40°C ~ 85°C (TA) | 4.5V ~ 18V | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | 7,741 | ||
 EL7457CU Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2V | 2A, 2A | - | 13.5ns, 13ns | Non-Inverting | Surface Mount | -40°C ~ 85°C (TA) | 4.5V ~ 18V | 16-SSOP (0.154", 3.90mm Width) | 16-QSOP | 2,261 | ||
EL7156CNZ Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Single | 1 | IGBT | 0.8V, 2.4V | 3.5A, 3.5A | - | 14.5ns, 15ns | Non-Inverting | Through Hole | -40°C ~ 125°C (TJ) | 4.5V ~ 16.5V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 2,977 | ||
EL7156CS-T13 Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Single | 1 | IGBT | 0.8V, 2.4V | 3.5A, 3.5A | - | 14.5ns, 15ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 16.5V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 8,143 | ||
EL7156CS-T7 Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Single | 1 | IGBT | 0.8V, 2.4V | 3.5A, 3.5A | - | 14.5ns, 15ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 16.5V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3,785 | ||
EL7158IS-T13 Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Single | 1 | IGBT | 0.8V, 2.4V | 12A, 12A | - | 12ns, 12.2ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 12V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2,495 | ||
EL7158IS-T7 Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Single | 1 | IGBT | 0.8V, 2.4V | 12A, 12A | - | 12ns, 12.2ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 12V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 9,120 | ||
ISL6613BIB-T Intersil (Renesas Electronics Corporation) | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 1.25A, 2A | 36 V | 26ns, 18ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 7V ~ 13.2V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2,464 | ||
ISL6613BIBZ Intersil (Renesas Electronics Corporation) | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 1.25A, 2A | 36 V | 26ns, 18ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 7V ~ 13.2V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2,744 | ||
ISL6613BIBZ-T Intersil (Renesas Electronics Corporation) | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 1.25A, 2A | 36 V | 26ns, 18ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 7V ~ 13.2V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 5,330 | ||
 ISL6613BIR Intersil (Renesas Electronics Corporation) | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 1.25A, 2A | 36 V | 26ns, 18ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 7V ~ 13.2V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 8,416 | ||
ISL6613BIR-T Intersil (Renesas Electronics Corporation) | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 1.25A, 2A | 36 V | 26ns, 18ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 7V ~ 13.2V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 7,089 | ||
 ISL89168FRTAZ Intersil (Renesas Electronics Corporation) | Low-Side | Independent | 2 | N-Channel MOSFET | 1.22V, 2.08V | 6A, 6A | - | 20ns, 20ns | Inverting, Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 16V | 8-WDFN Exposed Pad | 8-TDFN (3x3) | 3,653 | ||
ISL6609ACRZ Intersil (Renesas Electronics Corporation) | 1 $3.2900 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 1V, 2V | -, 4A | 36 V | 8ns, 8ns | Non-Inverting | Surface Mount | 0°C ~ 125°C (TJ) | 4.5V ~ 5.5V | 8-VQFN Exposed Pad | 8-QFN (3x3) | 3,537 |