Gate Drivers
Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.
Sourcing Infineon Technologies Gate Drivers: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 968
| Product | Pricing | Datasheet | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Input Type | Mounting Type | Operating Temperature | Voltage - Supply | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 FZE1065EGGEGXUMA1 Infineon Technologies | 1 $104.0000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4,074 | |
 IRS2153DPBF Infineon Technologies | 1 $2.2826 100 $1.8260 500 $1.5217 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 180mA, 260mA | 600 V | 120ns, 50ns | RC Input Circuit | Through Hole | -40°C ~ 125°C (TJ) | 10V ~ 15.4V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 100 | |
 IR2110SPBF Infineon Technologies | 1 $1.0000 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 3.3V ~ 20V | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC | 3,709 | |
 IR2113PBF Infineon Technologies | 1 $3.4616 100 $2.7692 500 $2.3077 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | 3.3V ~ 20V | 14-DIP (0.300", 7.62mm) | 14-DIP | 100 | |
 IR2117SPBF Infineon Technologies | 1 $2.6900 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3,167 | |
IR25604STRPBF Infineon Technologies | 1 $2.2700 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3,127 | |
2ED21091S06FXUMA1 Infineon Technologies | 1 $2.2700 | High-Side and Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 1.1V, 1.7V | 290mA, 700mA | 20 V | 100ns, 35ns | - | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 | 3,263 | |
2ED2108S06FXUMA1 Infineon Technologies | 1 $2.2700 | Half-Bridge | Synchronous | 1 | IGBT, N-Channel MOSFET | 1.1V, 1.7V | 290mA, 700mA | 650 V | 100ns, 35ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-53 | 5,934 | |
IR2111PBF Infineon Technologies | 1 $5.0700 | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 5,509 | |
IR2102SPBF Infineon Technologies | 1 $4.4600 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600 V | 100ns, 50ns | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 5,193 | |
 IRS23364DSTRPBF Infineon Technologies | 1 $7.0100 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 125ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 11.5V ~ 20V | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC | 9,536 | |
IRS2103PBF Infineon Technologies | 1 $1.1085 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | Inverting, Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 6,800 | |
 IRS2334STRPBF Infineon Technologies | 1 $2.3616 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 125ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC | 7,542 | |
IRS2334SPBF Infineon Technologies | 1 $1.0000 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 125ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC | 2,739 | |
IR2104S Infineon Technologies | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600 V | 100ns, 50ns | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3,898 | ||
TLE9180C21QKXUMA1 Infineon Technologies | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5,373 | ||
TLE918020QKXUMA1 Infineon Technologies | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9,201 | ||
TLE918021QKXUMA1 Infineon Technologies | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1,888 | ||
TLE9180C20QKXUMA1 Infineon Technologies | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 7,836 | ||
IR2304PBF Infineon Technologies | 1 $2.2152 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.3V | 60mA, 130mA | 600 V | 200ns, 100ns | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | 10V ~ 20V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 100,000 |