Gate Drivers
Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.
Browse Gate Drivers by MPN. We highlight stock availability, support BOM matching, and source through original / verified channels.
Product List
Total Components: 6,925
| Product | Pricing | Datasheet | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Input Type | Mounting Type | Operating Temperature | Voltage - Supply | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 UC1709L Texas Instruments | 1 $31.1600 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5,873 | |
 TC1428COA Microchip Technology | 1 $1.4900 | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 3V | 1.2A, 1.2A | - | 35ns, 25ns | Inverting, Non-Inverting | Surface Mount | 0°C ~ 70°C (TA) | 4.5V ~ 16V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 6,069 | |
IRS2108SPBF None | 1 $1.0500 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | 10V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 9,524 | |
 LTC7004MPMSE#PBF ADI (Analog Devices, Inc.) | 1 $15.3600 | High-Side | Single | 1 | N-Channel MOSFET | - | - | 60 V | 90ns, 40ns | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 3.5V ~ 15V | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad | 10-MSOP-EP | 4,129 | |
 IX4351NE Hamlin / Littelfuse | 1 $3.2500 | Low-Side | Single | 1 | IGBT, SiC MOSFET | 1V, 2.2V | 9A, 9A | - | 10ns, 10ns | CMOS, TTL | Surface Mount | -40°C ~ 125°C (TA) | -10V ~ 25V | 16-SOIC (0.154", 3.90mm Width) Exposed Pad | 16-SOIC-EP | 9,321 | |
 MIC4120YME Microchip Technology | 1 $1.5800 | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 6A, 6A | - | 12ns, 13ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 20V | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 7,643 | |
 L6386AD STMicroelectronics | 1 $1.7700 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 1.5V, 3.6V | 400mA, 650mA | 600 V | 50ns, 30ns | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 17V (Max) | 14-SOIC (0.154", 3.90mm Width) | 14-SO | 6,126 | |
 ISL83202IPZ None | 1 $1.0000 | Half-Bridge | Independent | 4 | N-Channel MOSFET | 1V, 2.5V | 1A, 1A | 70 V | 9ns, 9ns | Inverting, Non-Inverting | Through Hole | -55°C ~ 150°C (TJ) | 8.5V ~ 15V | 16-DIP (0.300", 7.62mm) | 16-PDIP | 9,685 | |
 TC4420CAT Microchip Technology | 1 $3.9900 | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 6A, 6A | - | 25ns, 25ns | Non-Inverting | Through Hole | 0°C ~ 150°C (TJ) | 4.5V ~ 18V | TO-220-5 | TO-220-5 | 6,133 | |
ISL6208IRZ-T Intersil (Renesas Electronics Corporation) | 1 $1.0855 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 0.5V, 2V | 2A, 2A | 33 V | 8ns, 8ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 4.5V ~ 5.5V | 8-VQFN Exposed Pad | 8-QFN (3x3) | 4,655 | |
 TPIC46L02DBR Texas Instruments | 1 $1.6192 | Low-Side | Independent | 6 | N-Channel MOSFET | - | 1.2mA, 1.2mA | - | 3.5µs, 3µs | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 4.5V ~ 5.5V | 28-SSOP (0.209", 5.30mm Width) | 28-SSOP | 4,593 | |
 MCP1403-E/SO Microchip Technology | 1 $2.4000 | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4.5A, 4.5A | - | 15ns, 18ns | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | 4.5V ~ 18V | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC | 6,456 | |
TC4626COE Microchip Technology | 1 $4.6640 | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | - | 33ns, 27ns | Inverting | Surface Mount | 0°C ~ 70°C (TA) | 4V ~ 6V | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC | 2,270 | |
 1SP0335V2M1-MBN1200H45E2-H Power Integrations | 1 $202.2083 | High-Side or Low-Side | Single | 1 | IGBT | - | 35A, 35A | 4500 V | 9ns, 30ns | - | Chassis Mount | -40°C ~ 85°C | 23.5V ~ 26.5V | Module | Module | 7,742 | |
 LT1162CN ADI (Analog Devices, Inc.) | Half-Bridge | Independent | 4 | N-Channel MOSFET | 0.8V, 2V | 1.5A, 1.5A | 60 V | 130ns, 60ns | Non-Inverting | Through Hole | 0°C ~ 125°C (TJ) | 10V ~ 15V | 24-DIP (0.300", 7.62mm) | 24-PDIP | 6,339 | ||
 MAX4427CPA ADI (Analog Devices, Inc.) | 1 $1.6500 | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | - | 20ns, 20ns | Non-Inverting | Through Hole | 0°C ~ 70°C (TA) | 4.5V ~ 18V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 4,611 | |
EL7242CN Intersil (Renesas Electronics Corporation) | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 10ns, 10ns | Inverting, Non-Inverting | Through Hole | -40°C ~ 125°C (TJ) | 4.5V ~ 16V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 3,337 | ||
EL7156CNZ Intersil (Renesas Electronics Corporation) | High-Side or Low-Side | Single | 1 | IGBT | 0.8V, 2.4V | 3.5A, 3.5A | - | 14.5ns, 15ns | Non-Inverting | Through Hole | -40°C ~ 125°C (TJ) | 4.5V ~ 16.5V | 8-DIP (0.300", 7.62mm) | 8-PDIP | 2,977 | ||
ISL6613BIB-T Intersil (Renesas Electronics Corporation) | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | - | 1.25A, 2A | 36 V | 26ns, 18ns | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | 7V ~ 13.2V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2,464 | ||
 IXDE509D1T/R Hamlin / Littelfuse | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | - | 25ns, 23ns | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | 4.5V ~ 30V | 6-VDFN Exposed Pad | 6-DFN (4x5) | 4,773 |