Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Transphorm Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 45
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 TP65H070LSG-TR Transphorm | 1 $13.7400 | 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 25A (Tc) | 650 V | - | N-Channel | 9.3 nC @ 10 V | 600 pF @ 400 V | 96W (Tc) | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 3-PQFN (8x8) | GaNFET (Gallium Nitride) | 3-PowerDFN | 4,195 | |
TPH3206PS Transphorm | 1 $10.3700 | 10V | ±18V | Through Hole | -55°C ~ 175°C (TJ) | 17A (Tc) | 600 V | - | N-Channel | 9.3 nC @ 4.5 V | 760 pF @ 480 V | 96W (Tc) | 180mOhm @ 11A, 8V | 2.6V @ 500µA | TO-220AB | GaNFET (Gallium Nitride) | TO-220-3 | 6,701 | |
TP65H070LDG Transphorm | 1 $13.7400 | 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 25A (Tc) | 650 V | - | N-Channel | 9.3 nC @ 10 V | 600 pF @ 400 V | 96W (Tc) | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 3-PQFN (8x8) | GaNFET (Cascode Gallium Nitride FET) | 3-PowerDFN | 2,807 | |
TP65H050WS Transphorm | 1 $19.2400 | 12V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 34A (Tc) | 650 V | - | N-Channel | 24 nC @ 10 V | 1000 pF @ 400 V | 119W (Tc) | 60mOhm @ 22A, 10V | 4.8V @ 700µA | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 8,857 | |
TP65H035G4WS Transphorm | 1 $19.5400 | 10V | ±20V | Through Hole | -55°C ~ 150°C | 46.5A (Tc) | 650 V | - | N-Channel | 22 nC @ 0 V | 1500 pF @ 400 V | 156W (Tc) | 41mOhm @ 30A, 10V | 4.8V @ 1mA | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 7,056 | |
TP90H050WS Transphorm | 1 $20.0300 | 10V | ±20V | Through Hole | -55°C ~ 150°C | 34A (Tc) | 900 V | - | N-Channel | 17.5 nC @ 10 V | 980 pF @ 600 V | 119W (Tc) | 63mOhm @ 22A, 10V | 4.4V @ 700µA | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 7,394 | |
TP65H035WS Transphorm | 1 $21.7600 | 12V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 46.5A (Tc) | 650 V | - | N-Channel | 36 nC @ 10 V | 1500 pF @ 400 V | 156W (Tc) | 41mOhm @ 30A, 10V | 4.8V @ 1mA | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 3,377 | |
TP65H035WSQA Transphorm | 1 $23.2000 | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 47.2A (Tc) | 650 V | - | N-Channel | 24 nC @ 10 V | 1500 pF @ 400 V | 187W (Tc) | 41mOhm @ 32A, 10V | 4.5V @ 1mA | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 7,926 | |
TP65H015G5WS Transphorm | 1 $35.1400 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 93A (Tc) | 650 V | - | N-Channel | 100 nC @ 10 V | 5218 pF @ 400 V | 266W (Tc) | 18mOhm @ 60A, 10V | 4.8V @ 2mA | TO-247-3 | GaNFET (Gallium Nitride) | TO-247-3 | 4,059 | |
TP65H150G4PS Transphorm | 1 $6.2403 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3,495 | |
TPH3206PD Transphorm | 1 $11.2600 | 10V | ±18V | Through Hole | -55°C ~ 175°C (TJ) | 17A (Tc) | 600 V | - | N-Channel | 9.3 nC @ 4.5 V | 760 pF @ 480 V | 96W (Tc) | 180mOhm @ 11A, 8V | 2.6V @ 500µA | TO-220AB | GaNFET (Gallium Nitride) | TO-220-3 | 9,567 | |
TP65H050WSQA Transphorm | 1 $20.6700 | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 36A (Tc) | 650 V | - | N-Channel | 24 nC @ 10 V | 1000 pF @ 400 V | 150W (Tc) | 60mOhm @ 25A, 10V | 4.8V @ 700µA | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 8,646 | |
TPH3205WSBQA Transphorm | 1 $22.9700 | 10V | ±18V | Through Hole | -55°C ~ 150°C (TJ) | 35A (Tc) | 650 V | - | N-Channel | 42 nC @ 8 V | 2200 pF @ 400 V | 125W (Tc) | 62mOhm @ 22A, 8V | 2.6V @ 700µA | TO-247-3 | GaNFET (Gallium Nitride) | TO-247-3 | 3,061 | |
TPH3202PS Transphorm | 10V | ±18V | Through Hole | -55°C ~ 175°C (TJ) | 9A (Tc) | 600 V | - | N-Channel | 9.3 nC @ 4.5 V | 760 pF @ 480 V | 65W (Tc) | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | TO-220AB | GaNFET (Gallium Nitride) | TO-220-3 | 2,603 | ||
TPH3202LD Transphorm | 10V | ±18V | Surface Mount | -55°C ~ 175°C (TJ) | 9A (Tc) | 600 V | - | N-Channel | 9.3 nC @ 4.5 V | 760 pF @ 480 V | 65W (Tc) | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 4-PQFN (8x8) | GaNFET (Gallium Nitride) | 4-PowerDFN | 6,384 | ||
TPH3206LD Transphorm | 10V | ±18V | Surface Mount | -55°C ~ 175°C (TJ) | 17A (Tc) | 600 V | - | N-Channel | 9.3 nC @ 4.5 V | 760 pF @ 480 V | 96W (Tc) | 180mOhm @ 11A, 8V | 2.6V @ 500µA | PQFN (8x8) | GaNFET (Gallium Nitride) | 4-PowerDFN | 5,115 | ||
TP65H150G4LSG-TR Transphorm | 1 $5.7400 | 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 13A (Tc) | 650 V | - | N-Channel | 8 nC @ 10 V | 598 pF @ 400 V | 52W (Tc) | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 2-PQFN (8x8) | GaNFET (Gallium Nitride) | 2-PowerTSFN | 5,762 | |
TP65H050G4WS Transphorm | 1 $15.6400 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 34A (Tc) | 650 V | - | N-Channel | 24 nC @ 10 V | 1000 pF @ 400 V | 119W (Tc) | 60mOhm @ 22A, 10V | 4.8V @ 700µA | TO-247-3 | GaNFET (Gallium Nitride) | TO-247-3 | 7,938 | |
TP65H035G4WSQA Transphorm | 1 $21.0400 | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 47.2A (Tc) | 650 V | - | N-Channel | 22 nC @ 10 V | 1500 pF @ 400 V | 187W (Tc) | 41mOhm @ 30A, 10V | 4.8V @ 1mA | TO-247-3 | GaNFET (Gallium Nitride) | TO-247-3 | 9,647 | |
TP65H300G4LSG-TR Transphorm | 1 $4.0200 | 8V | ±18V | Surface Mount | -55°C ~ 150°C (TJ) | 6.5A (Tc) | 650 V | - | N-Channel | 9.6 nC @ 8 V | 760 pF @ 400 V | 21W (Tc) | 312mOhm @ 5A, 8V | 2.6V @ 500µA | 3-PQFN (8x8) | GaNFET (Gallium Nitride) | 3-PowerDFN | 2,253 |