Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Inventchip Technology Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 3
ProductPricingDatasheetDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Mounting TypeOperating TemperatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)FET FeatureFET TypeGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdSupplier Device PackageTechnologyPackage / CaseStock & Quantity
IV1Q12050T3
Inventchip Technology
1
$39.2800
Datasheet
20V+20V, -5VThrough Hole-55°C ~ 175°C (TJ)58A (Tc)1200 V-N-Channel120 nC @ 20 V2770 pF @ 800 V327W (Tc)65mOhm @ 20A, 20V3.2V @ 6mATO-247-3SiCFET (Silicon Carbide)TO-247-3
5,050
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IV1Q12050T4
Inventchip Technology
1
$40.3400
Datasheet
20V+20V, -5VThrough Hole-55°C ~ 175°C (TJ)58A (Tc)1200 V-N-Channel120 nC @ 20 V2750 pF @ 800 V344W (Tc)65mOhm @ 20A, 20V3.2V @ 6mATO-247-4SiCFET (Silicon Carbide)TO-247-4
2,340
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IV1Q12160T4
Inventchip Technology
1
$19.6400
Datasheet
20V+20V, -5VThrough Hole-55°C ~ 175°C (TJ)20A (Tc)1200 V-N-Channel43 nC @ 20 V885 pF @ 800 V138W (Tc)195mOhm @ 10A, 20V2.9V @ 1.9mATO-247-4SiCFET (Silicon Carbide)TO-247-4
2,795
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