Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Sourcing EPC Transistors - FETs, MOSFETs - Arrays: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 19
| Product | Pricing | Datasheet | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power - Max | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 EPC2106 EPC | 1 $1.8200 | Surface Mount | -40°C ~ 150°C (TJ) | 1.7A | 100V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 0.73nC @ 5V | 75pF @ 50V | 70mOhm @ 2A, 5V | 2.5V @ 600µA | - | Die | Die | 1,969 | |
 EPC2110 EPC | 1 $2.3700 | - | -40°C ~ 150°C (TJ) | 3.4A | 120V | GaNFET (Gallium Nitride) | 2 N-Channel (Dual) Common Source | 0.8nC @ 5V | 80pF @ 60V | 60mOhm @ 4A, 5V | 2.5V @ 700µA | - | Die | Die | 6,872 | |
 EPC2104 EPC | 1 $9.1600 | Surface Mount | -40°C ~ 150°C (TJ) | 23A | 100V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 7nC @ 5V | 800pF @ 50V | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | - | Die | Die | 9,455 | |
EPC2102 EPC | 1 $9.1600 | Surface Mount | -40°C ~ 150°C (TJ) | 23A | 60V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 6.8nC @ 5V | 830pF @ 30V | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | - | Die | Die | 8,514 | |
 EPC2110ENGRT EPC | 1 $2.3700 | Surface Mount | -40°C ~ 150°C (TJ) | 3.4A | 120V | GaNFET (Gallium Nitride) | 2 N-Channel (Dual) Common Source | 0.8nC @ 5V | 80pF @ 60V | 60mOhm @ 4A, 5V | 2.5V @ 700µA | - | Die | Die | 9,471 | |
EPC2100ENGRT EPC | 1 $5.1832 | Surface Mount | -40°C ~ 150°C (TJ) | 10A (Ta), 40A (Ta) | 30V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | - | Die | Die | 2,219 | |
EPC2221 EPC | 1 $2.7300 | Surface Mount | 150°C (TJ) | 5A | 100V | GaNFET (Gallium Nitride) | 2 N-Channel (Dual) Common Source | - | - | - | - | - | Die | Die | 2,693 | |
EPC2106ENGRT EPC | Surface Mount | -40°C ~ 150°C (TJ) | 1.7A | 100V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 0.73nC @ 5V | 75pF @ 50V | 70mOhm @ 2A, 5V | 2.5V @ 600µA | - | Die | Die | 5,433 | ||
EPC2103ENGRT EPC | Surface Mount | - | 23A | 80V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 6.5nC @ 5V | 7600pF @ 40V | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | - | Die | Die | 6,118 | ||
EPC2104ENGRT EPC | Surface Mount | -40°C ~ 150°C (TJ) | 23A | 100V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 7nC @ 5V | 800pF @ 50V | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | - | Die | Die | 4,290 | ||
EPC2105ENGRT EPC | Surface Mount | -40°C ~ 150°C (TJ) | 9.5A | 80V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 2.5nC @ 5V | 300pF @ 40V | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | - | Die | Die | 2,099 | ||
EPC2101ENGRT EPC | Surface Mount | -40°C ~ 150°C (TJ) | 9.5A, 38A | 60V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 2.7nC @ 5V | 300pF @ 30V | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | - | Die | Die | 5,626 | ||
EPC2102ENGRT EPC | Surface Mount | -40°C ~ 150°C (TJ) | 23A (Tj) | 60V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 6.8nC @ 5V | 830pF @ 30V | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | - | Die | Die | 2,834 | ||
EPC2111 EPC | 1 $3.2100 | Surface Mount | -40°C ~ 150°C (TJ) | 16A (Ta) | 30V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | - | Die | Die | 1,720 | |
EPC2103 EPC | 1 $9.1600 | Surface Mount | -40°C ~ 150°C (TJ) | 28A | 80V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 6.5nC @ 5V | 760pF @ 40V | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | - | Die | Die | 2,897 | |
EPC2105 EPC | 1 $9.1600 | Surface Mount | -40°C ~ 150°C (TJ) | 9.5A, 38A | 80V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | - | Die | Die | 4,958 | |
EPC2108 EPC | 1 $1.9100 | Surface Mount | -40°C ~ 150°C (TJ) | 1.7A, 500mA | 60V, 100V | GaNFET (Gallium Nitride) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | - | 9-BGA (1.35x1.35) | 9-VFBGA | 5,905 | |
EPC2100 EPC | 1 $6.9400 | Surface Mount | -40°C ~ 150°C (TJ) | 10A (Ta), 40A (Ta) | 30V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | - | Die | Die | 5,088 | |
EPC2101 EPC | 1 $9.1600 | Surface Mount | -40°C ~ 150°C (TJ) | 9.5A, 38A | 60V | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | - | Die | Die | 2,672 |