Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Sourcing Freescale / NXP Semiconductors Transistors - JFETs: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 87
| Product | Pricing | Datasheet | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Current Drain (Id) - Max | Voltage - Cutoff (VGS off) @ Id | Resistance - RDS(On) | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 J109,126 Freescale / NXP Semiconductors | 25 V | 80 mA @ 15 V | - | 2 V @ 1 µA | 12 Ohms | Through Hole | 150°C (TJ) | 25 V | N-Channel | 30pF @ 10V (VGS) | 400 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 3,414 | ||
J174,126 Freescale / NXP Semiconductors | 30 V | 20 mA @ 15 V | - | 5 V @ 10 nA | 85 Ohms | Through Hole | 150°C (TJ) | 30 V | P-Channel | 8pF @ 10V (VGS) | 400 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 2,151 | ||
J176,126 Freescale / NXP Semiconductors | 30 V | 2 mA @ 15 V | - | 1 V @ 10 nA | 250 Ohms | Through Hole | 150°C (TJ) | 30 V | P-Channel | 8pF @ 10V (VGS) | 400 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 8,512 | ||
J108,126 Freescale / NXP Semiconductors | 25 V | 80 mA @ 5 V | - | 10 V @ 1 µA | 8 Ohms | Through Hole | 150°C (TJ) | 25 V | N-Channel | 30pF @ 0V | 400 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 8,108 | ||
J110,126 Freescale / NXP Semiconductors | 25 V | 10 mA @ 5 V | - | 4 V @ 1 µA | 18 Ohms | Through Hole | 150°C (TJ) | 25 V | N-Channel | 30pF @ 0V | 400 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 5,005 | ||
J1A012YXS/T1AY404, Freescale / NXP Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | 8,703 | ||
J2A012YXS/T1AY403, Freescale / NXP Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | 9,498 | ||
J2A020YXS/T0BY425, Freescale / NXP Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | 2,384 | ||
J2A040YXS/T0BY424, Freescale / NXP Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | 9,426 | ||
J2A080GX0/T0BG295, Freescale / NXP Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | 2,977 | ||
BF510 Freescale / NXP Semiconductors | 1 $1.1800 | 20 V | 3 mA @ 10 V | 30 mA | 800 mV @ 10 µA | - | Surface Mount | 150°C (TJ) | 20 V | N-Channel | 5pF @ 10V | 250 mW | TO-236AB | TO-236-3, SC-59, SOT-23-3 | 7,073 | |
J111,126 Freescale / NXP Semiconductors | 1 $0.2600 | 40 V | 20 mA @ 15 V | - | 10 V @ 1 µA | 30 Ohms | Through Hole | 150°C (TJ) | 40 V | N-Channel | 6pF @ 10V (VGS) | 400 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 4,325 | |
PMBFJ308,215 Freescale / NXP Semiconductors | 25 V | 12 mA @ 10 V | - | 1 V @ 1 µA | 50 Ohms | Surface Mount | 150°C (TJ) | 25 V | N-Channel | 5pF @ 10V | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 3,032 | ||
BFT46,215 Freescale / NXP Semiconductors | - | 200 µA @ 10 V | 10 mA | 1.2 V @ 0.5 nA | - | Surface Mount | 150°C (TJ) | 25 V | N-Channel | 5pF @ 10V | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 1,188 | ||
BFR30,235 Freescale / NXP Semiconductors | - | 4 mA @ 10 V | 10 mA | 5 V @ 0.5 nA | - | Surface Mount | 150°C (TJ) | 25 V | N-Channel | 4pF @ 10V | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 4,844 | ||
BFR30,215 Freescale / NXP Semiconductors | - | 4 mA @ 10 V | 10 mA | 5 V @ 0.5 nA | - | Surface Mount | 150°C (TJ) | 25 V | N-Channel | 4pF @ 10V | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 1,655 | ||
PMBFJ111,215 Freescale / NXP Semiconductors | 40 V | 20 mA @ 15 V | - | 10 V @ 1 µA | 30 Ohms | Surface Mount | 150°C (TJ) | 40 V | N-Channel | 6pF @ 10V (VGS) | 300 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 1,744 | ||
PMBF4392,215 Freescale / NXP Semiconductors | 1 $1.0000 | 40 V | 25 mA @ 20 V | - | 2 V @ 1 nA | - | Surface Mount | 150°C (TJ) | 40 V | N-Channel | 14pF @ 20V | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 2,754 | |
BSR56,215 Freescale / NXP Semiconductors | 40 V | 50 mA @ 15 V | 20 mA | 4 V @ 0.5 nA | 25 Ohms | Surface Mount | 150°C (TJ) | 40 V | N-Channel | - | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 7,539 | ||
PMBFJ309,215 Freescale / NXP Semiconductors | 25 V | 12 mA @ 10 V | - | 1 V @ 1 µA | 50 Ohms | Surface Mount | 150°C (TJ) | 25 V | N-Channel | 5pF @ 10V | 250 mW | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | 1,434 |