Transistors - JFETs

Transistors - JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Sourcing UnitedSiC Transistors - JFETs: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 5
ProductPricingDatasheetVoltage - Breakdown (V(BR)GSS)Current - Drain (Idss) @ Vds (Vgs=0)Current Drain (Id) - MaxVoltage - Cutoff (VGS off) @ IdResistance - RDS(On)Mounting TypeOperating TemperatureDrain to Source Voltage (Vdss)FET TypeInput Capacitance (Ciss) (Max) @ VdsPower - MaxSupplier Device PackagePackage / CaseStock & Quantity
UJ3N120035K3S
UnitedSiC
1
$29.3000
Datasheet
1200 V-63 A-45 mOhmsThrough Hole-55°C ~ 175°C (TJ)1200 VN-Channel2145pF @ 100V429 WTO-247-3TO-247-3
3,960
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UF3N170400B7S
UnitedSiC
1
$9.4800
Datasheet
1.7 V2.2 µA @ 1.7 V6.8 A-500 mOhmsSurface Mount-55°C ~ 175°C (TJ)1.7 VN-Channel225pF @ 100V68 WD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
2,437
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UJ3N065080K3S
UnitedSiC
1
$8.7400
Datasheet
650 V-32 A-95 mOhmsThrough Hole-55°C ~ 175°C (TJ)650 VN-Channel630pF @ 100V190 WTO-247-3TO-247-3
1,845
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UJ3N065025K3S
UnitedSiC
1
$20.4700
Datasheet
650 V-85 A-33 mOhmsThrough Hole-55°C ~ 175°C (TJ)650 VN-Channel2360pF @ 100V441 WTO-247-3TO-247-3
9,916
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UJ3N120070K3S
UnitedSiC
1
$15.9400
Datasheet
1200 V-33.5 A-90 mOhmsThrough Hole-55°C ~ 175°C (TJ)1200 VN-Channel985pF @ 100V254 WTO-247-3TO-247-3
7,043
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