Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Sourcing onsemi Transistors - JFETs: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 349
| Product | Pricing | Datasheet | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Current Drain (Id) - Max | Voltage - Cutoff (VGS off) @ Id | Resistance - RDS(On) | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 2N5459_D75Z onsemi | 25 V | 4 mA @ 15 V | - | 2 V @ 10 nA | - | Through Hole | -55°C ~ 150°C (TJ) | - | N-Channel | 7pF @ 15V | 625 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 4,243 | ||
2N5638_D26Z onsemi | 30 V | 50 mA @ 20 V | - | - | 30 Ohms | Through Hole | -55°C ~ 150°C (TJ) | 30 V | N-Channel | 10pF @ 12V (VGS) | 350 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 8,526 | ||
2N5639_D75Z onsemi | 30 V | 25 mA @ 20 V | - | - | 60 Ohms | Through Hole | -55°C ~ 150°C (TJ) | 30 V | N-Channel | 10pF @ 12V (VGS) | 350 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 1,903 | ||
BF247A onsemi | 25 V | 30 mA @ 15 V | - | 600 mV @ 100 nA | - | Through Hole | -55°C ~ 150°C (TJ) | - | N-Channel | - | 350 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 9,937 | ||
KSK596PAWD onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 6,974 | ||
KSK596PBWD onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 4,062 | ||
KSK596PCWD onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 7,389 | ||
FJN598JATA onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 150 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 5,757 | ||
FJN598JCTA onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 150 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 5,619 | ||
FJN598JBTA onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 150 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 9,825 | ||
FJN598JBBU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 150 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 4,268 | ||
FJN598JABU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 150 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 8,865 | ||
FJN598JCBU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 150 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 3,520 | ||
KSK596BBU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 8,008 | ||
KSK596BU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 1,479 | ||
KSK596CBU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 9,374 | ||
KSK596ABU onsemi | 20 V | 100 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Through Hole | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | TO-92S | TO-226-3, TO-92-3 Short Body | 5,430 | ||
KSK595HMTF onsemi | - | 150 µA @ 5 V | 1 mA | 600 mV @ 1 µA | - | Surface Mount | 150°C (TJ) | - | N-Channel | 3.5pF @ 5V | 100 mW | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | 7,032 | ||
KSK30RBU onsemi | 50 V | 300 µA @ 10 V | - | 400 mV @ 100 nA | - | Through Hole | 125°C (TJ) | - | N-Channel | 8.2pF @ 0V | 100 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 8,868 | ||
KSK30OBU onsemi | 50 V | 600 µA @ 10 V | - | 400 mV @ 100 nA | - | Through Hole | 125°C (TJ) | - | N-Channel | 8.2pF @ 0V | 100 mW | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 4,247 |