Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Sourcing Infineon Technologies Transistors - JFETs: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 3
| Product | Pricing | Datasheet | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Current Drain (Id) - Max | Voltage - Cutoff (VGS off) @ Id | Resistance - RDS(On) | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 IJW120R070T1FKSA1 Infineon Technologies | 1.2 V | 3.3 µA @ 1.2 V | 35 A | - | 70 mOhms | Through Hole | -55°C ~ 175°C (TJ) | 1.2 V | N-Channel | 2000pF @ 19.5V (VGS) | 238 W | PG-TO247-3 | TO-247-3 | 2,461 | ||
IJW120R100T1FKSA1 Infineon Technologies | 1 $18.6000 | 1.2 V | 1.5 µA @ 1.2 V | 26 A | - | 100 mOhms | Through Hole | -55°C ~ 175°C (TJ) | 1.2 V | N-Channel | 1550pF @ 19.5V (VGS) | 190 W | PG-TO247-3 | TO-247-3 | 4,488 | |
IJW120R070T1FKSA1 Infineon Technologies | 1 $29.3200 | - | - | - | - | - | - | - | - | - | - | - | - | - | 3,836 |