Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Sourcing GeneSiC Semiconductor Transistors - IGBTs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 1
| Product | Pricing | Datasheet | Current - Collector Pulsed (Icm) | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Mounting Type | Operating Temperature | IGBT Type | Reverse Recovery Time (trr) | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GA35XCP12-247 GeneSiC Semiconductor | 35 A | 2.66mJ (on), 4.35mJ (off) | Standard | 50 nC | - | 800V, 35A, 22Ohm, 15V | Through Hole | -40°C ~ 150°C (TJ) | PT | 36 ns | 3V @ 15V, 35A | - | - | TO-247AB | 1200 V | TO-247-3 | 6,897 |