Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Sourcing Diodes Incorporated Transistors - IGBTs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 7
| Product | Pricing | Datasheet | Current - Collector Pulsed (Icm) | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Mounting Type | Operating Temperature | IGBT Type | Reverse Recovery Time (trr) | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 DGTD65T15H2TF Diodes Incorporated | 1 $2.0200 | 60 A | 270µJ (on), 86µJ (off) | Standard | 61 nC | 19ns/128ns | 400V, 15A, 10Ohm, 15V | Through Hole | -40°C ~ 175°C (TJ) | Field Stop | 150 ns | 2V @ 15V, 15A | 30 A | 48 W | ITO-220AB | 650 V | TO-220-3 Full Pack, Isolated Tab | 2,907 | |
DGTD65T40S1PT Diodes Incorporated | 1 $3.1893 | 160 A | 1.15mJ (on), 350µJ (off) | Standard | 219 nC | 58ns/245ns | 400V, 40A, 7.9Ohm, 15V | Through Hole | -40°C ~ 175°C (TJ) | Field Stop | 145 ns | 2.4V @ 15V, 40A | 80 A | 341 W | TO-247 | 650 V | TO-247-3 | 2,508 | |
DGTD120T25S1PT Diodes Incorporated | 1 $5.3319 | 100 A | 1.44mJ (on), 550µJ (off) | Standard | 204 nC | 73ns/269ns | 600V, 25A, 23Ohm, 15V | Through Hole | -40°C ~ 175°C (TJ) | Field Stop | 100 ns | 2.4V @ 15V, 25A | 50 A | 348 W | TO-247 | 1200 V | TO-247-3 | 8,477 | |
DGTD120T40S1PT Diodes Incorporated | 160 A | 1.96mJ (on), 540µJ (off) | Standard | 341 nC | 65ns/308ns | 600V, 40A, 10Ohm, 15V | Through Hole | -55°C ~ 150°C (TJ) | Field Stop | 100 ns | 2.4V @ 15V, 40A | 80 A | 357 W | TO-247 | 1200 V | TO-247-3 | 8,415 | ||
DGTD65T40S2PT Diodes Incorporated | 120 A | 500µJ (on), 400µJ (off) | Standard | 60 nC | 6ns/55ns | 400V, 40A, 10Ohm, 15V | Through Hole | -40°C ~ 175°C (TJ) | Field Stop | 60 ns | 2.3V @ 15V, 40A | 80 A | 230 W | TO-247 | 650 V | TO-247-3 | 5,489 | ||
DGTD65T50S1PT Diodes Incorporated | 200 A | 770µJ (on), 550µJ (off) | Standard | 287 nC | 58ns/328ns | 400V, 50A, 7.9Ohm, 15V | Through Hole | -40°C ~ 175°C (TJ) | Field Stop | 80 ns | 2.4V @ 15V, 50A | 100 A | 375 W | TO-247 | 650 V | TO-247-3 | 1,202 | ||
DGTD65T60S2PT Diodes Incorporated | 180 A | 920µJ (on), 530µJ (off) | Standard | 95 nC | 42ns/142ns | 400V, 60A, 7Ohm, 15V | Through Hole | -40°C ~ 175°C (TJ) | Field Stop | 205 ns | 2.4V @ 15V, 60A | 100 A | 428 W | TO-247 | 650 V | TO-247-3 | 6,542 |