Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Sourcing WeEn Semiconductors Co., Ltd Transistors - IGBTs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 1
| Product | Pricing | Datasheet | Current - Collector Pulsed (Icm) | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Mounting Type | Operating Temperature | IGBT Type | Reverse Recovery Time (trr) | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 WG50N65DHWQ WeEn Semiconductors Co., Ltd | 1 $3.5500 | 200 A | 1.7mJ (on), 600µJ (off) | Standard | 160 nC | 66ns/163ns | 400V, 50A, 10Ohm, 15V | Through Hole | -55°C ~ 150°C (TJ) | Trench Field Stop | 105 ns | 2V @ 15V, 50A | 91 A | 278 W | TO-247-3 | 650 V | TO-247-3 | 5,013 |