Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Sourcing Renesas Electronics Corporation Transistors - IGBTs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 4
| Product | Pricing | Datasheet | Current - Collector Pulsed (Icm) | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Mounting Type | Operating Temperature | IGBT Type | Reverse Recovery Time (trr) | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 RJH60D1DPP-E0#T2 Renesas Electronics Corporation | 1 $1.4000 | - | 100µJ (on), 130µJ (off) | Standard | 13 nC | 30ns/42ns | 300V, 10A, 5Ohm, 15V | Through Hole | 150°C (TJ) | Trench | 70 ns | 2.5V @ 15V, 10A | 20 A | 30 W | TO-220FP | 600 V | TO-220-3 Full Pack | 5,671 | |
RJH1DF7RDPQ-80#T2 Renesas Electronics Corporation | 1 $5.1700 | - | - | Standard | - | 58ns/144ns | 600V, 35A, 5Ohm, 15V | Through Hole | 150°C (TJ) | - | - | 2.55V @ 15V, 35A | 60 A | 250 W | TO-247 | 1350 V | TO-247-3 | 9,704 | |
RJP60D0DPK-01#T0 Renesas Electronics Corporation | 1 $2.0700 | 90 A | - | Standard | 45 nC | 35ns/90ns | 300V, 22A, 5Ohm, 15V | Through Hole | 150°C (TJ) | - | - | 2.2V @ 15V, 22A | 45 A | 140 W | TO-3P | 600 V | TO-3P-3, SC-65-3 | 7,717 | |
RJH1BF7RDPQ-80#T2 Renesas Electronics Corporation | 1 $5.7500 | 100 A | - | Standard | - | - | - | Through Hole | 150°C (TJ) | - | - | 2.35V @ 15V, 60A | 60 A | 250 W | TO-247 | 1100 V | TO-247-3 | 1,308 |