Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Sourcing Rectron USA Transistors - IGBTs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 1
| Product | Pricing | Datasheet | Current - Collector Pulsed (Icm) | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Mounting Type | Operating Temperature | IGBT Type | Reverse Recovery Time (trr) | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 RM40N600T7 Rectron USA | 1 $1.3200 | 160 A | 1.12mJ (on), 610µJ (off) | Standard | 149 nC | 21ns/203ns | 400V, 40A, 10Ohm, 15V | Through Hole | -55°C ~ 150°C (TJ) | Trench Field Stop | 151 ns | 2V @ 15V, 40A | 80 A | 306 W | TO-247 | 600 V | TO-247-3 | 8,229 |