Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Honeywell Aerospace Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 4
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 HTNFET-T Honeywell Aerospace | 5V | 10V | Through Hole | -55°C ~ 225°C (TJ) | - | 55 V | - | N-Channel | 4.3 nC @ 5 V | 290 pF @ 28 V | 50W (Tj) | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4-Power Tab | MOSFET (Metal Oxide) | 4-SIP | 8,074 | ||
HTNFET-D Honeywell Aerospace | 5V | 10V | Through Hole | -55°C ~ 225°C (TJ) | - | 55 V | - | N-Channel | 4.3 nC @ 5 V | 290 pF @ 28 V | 50W (Tj) | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 8-CDIP-EP | MOSFET (Metal Oxide) | 8-CDIP Exposed Pad | 7,370 | ||
HTNFET-DC Honeywell Aerospace | 5V | 10V | Through Hole | - | - | 55 V | - | N-Channel | 4.3 nC @ 5 V | 290 pF @ 28 V | 50W (Tj) | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | - | MOSFET (Metal Oxide) | 8-CDIP Exposed Pad | 2,647 | ||
HTNFET-TC Honeywell Aerospace | 5V | 10V | Through Hole | - | - | 55 V | - | N-Channel | 4.3 nC @ 5 V | 290 pF @ 28 V | 50W (Tj) | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | - | MOSFET (Metal Oxide) | - | 6,492 |