Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Goford Semiconductor Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 138
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GT105N10T Goford Semiconductor | 1 $1.4200 | 4.5V, 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 55A (Tc) | 100 V | - | N-Channel | 54 nC @ 10 V | - | 74W (Tc) | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | TO-220 | MOSFET (Metal Oxide) | TO-220-3 | 5,513 | |
G10N10A Goford Semiconductor | 1 $0.6300 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 10A (Ta) | 100 V | - | N-Channel | 90 nC @ 10 V | 690 pF @ 25 V | 28W (Ta) | 130mOhm @ 2A, 10V | 3V @ 250µA | TO-252 (D-Pak) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1,886 | |
G23N06K Goford Semiconductor | 1 $0.6700 | - | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 23A | 60 V | - | N-Channel | 25 nC @ 10 V | 590 pF @ 15 V | 38W | 35mOhm @ 20A, 10V | 2.5V @ 250µA | TO-252 (DPAK) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6,363 | |
G16P03D3 Goford Semiconductor | 1 $0.6600 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 16A (Tc) | 30 V | - | P-Channel | 35 nC @ 10 V | 1995 pF @ 15 V | 3W (Tc) | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 8-DFN (3.15x3.05) | MOSFET (Metal Oxide) | 8-PowerVDFN | 5,918 | |
G50N03D5 Goford Semiconductor | 1 $0.6600 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 50A (Tc) | 30 V | - | N-Channel | 38.4 nC @ 10 V | 1784 pF @ 15 V | 20W (Tc) | 4.5mOhm @ 20A, 10V | 2.4V @ 250µA | 8-DFN (4.9x5.75) | MOSFET (Metal Oxide) | 8-PowerTDFN | 7,067 | |
G48N03D3 Goford Semiconductor | 1 $0.6600 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 48A (Tc) | 30 V | - | N-Channel | 38 nC @ 10 V | 1784 pF @ 15 V | 45W (Tc) | 6mOhm @ 20A, 10V | 2.4V @ 250µA | 8-DFN (3.15x3.05) | MOSFET (Metal Oxide) | 8-PowerVDFN | 7,579 | |
G16P03S Goford Semiconductor | 1 $0.6400 | - | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 16A | 30 V | - | P-Channel | 35 nC @ 10 V | 2800 pF @ 15 V | 3W | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 8-SOP | MOSFET (Metal Oxide) | 8-SOIC (0.154", 3.90mm Width) | 9,735 | |
G06N06S Goford Semiconductor | 1 $0.6400 | - | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 8A | 60 V | - | N-Channel | 46 nC @ 10 V | 1600 pF @ 30 V | 2.1W | 22mOhm @ 6A, 10V | 2.4V @ 250µA | 8-SOP | MOSFET (Metal Oxide) | 8-SOIC (0.154", 3.90mm Width) | 9,592 | |
5N20A Goford Semiconductor | 1 $0.7000 | - | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 5A | 200 V | - | N-Channel | 10.8 nC @ 10 V | 255 pF @ 25 V | 78W | 650mOhm @ 2.5A, 10V | 3V @ 250µA | TO-252 (DPAK) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,756 | |
G26P04D5 Goford Semiconductor | 1 $0.7000 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 26A (Tc) | 40 V | - | P-Channel | 45 nC @ 10 V | 2479 pF @ 20 V | 50W (Tc) | 18mOhm @ 12A, 10V | 2.5V @ 250µA | 8-DFN (4.9x5.75) | MOSFET (Metal Oxide) | 8-PowerTDFN | 7,323 | |
G33N03D52 Goford Semiconductor | 1 $0.7100 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 33A (Tc) | 30 V | - | N-Channel | 17.5 nC @ 10 V | 782 pF @ 15 V | 29W (Tc) | 13mOhm @ 16A, 10V | 3V @ 250µA | DFN5*6 | MOSFET (Metal Oxide) | DFN5*6 | 8,928 | |
GT060N04D3 Goford Semiconductor | 1 $0.7200 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 40A (Tc) | 40 V | - | N-Channel | 32 nC @ 10 V | 1282 pF @ 20 V | 36W (Tc) | 6.5mOhm @ 30A, 10V | 2.5V @ 250µA | 8-DFN (3.15x3.05) | MOSFET (Metal Oxide) | 8-PowerVDFN | 3,872 | |
G30N04D3 Goford Semiconductor | 1 $0.7300 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 30A (Tc) | 40 V | Standard | N-Channel | 30 nC @ 10 V | 1780 pF @ 20 V | 19.8W (Tc) | 9.5mOhm @ 20A, 10V | 2.5V @ 250µA | 8-DFN (3.15x3.05) | MOSFET (Metal Oxide) | 8-PowerVDFN | 1,629 | |
G60N04K Goford Semiconductor | 1 $0.7800 | - | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 60A | 40 V | - | N-Channel | 29 nC @ 10 V | 1800 pF @ 20 V | 65W | 7mOhm @ 30A, 10V | 2.5V @ 250µA | TO-252 (DPAK) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,444 | |
18N10 Goford Semiconductor | 1 $0.7800 | - | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 25A | 100 V | - | N-Channel | 28 nC @ 10 V | 1318 pF @ 50 V | 62.5W | 53mOhm @ 10A, 10V | 3V @ 250µA | TO-252 (DPAK) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5,229 | |
GT060N04K Goford Semiconductor | 1 $0.8200 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 54A (Tc) | 40 V | - | N-Channel | 19 nC @ 10 V | 1279 pF @ 20 V | 44W (Tc) | 5.5mOhm @ 30A, 10V | 2.3V @ 250µA | TO-252 | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3,018 | |
630A Goford Semiconductor | 1 $0.8700 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 11A | 200 V | - | N-Channel | 11.8 nC @ 10 V | 509 pF @ 25 V | 83W | 280mOhm @ 4.5A, 10V | 3V @ 250µA | TO-252 (DPAK) | MOSFET (Metal Oxide) | TO-251-3 Short Leads, IPak, TO-251AA | 8,022 | |
G70P02K Goford Semiconductor | 1 $0.9100 | 2.5V, 4.5V | ±12V | Surface Mount | -55°C ~ 150°C (TJ) | 70A (Tc) | 15 V | - | P-Channel | 55 nC @ 4.5 V | 3500 pF @ 10 V | 70W (Tc) | 8.5mOhm @ 20A, 4.5V | 1.5V @ 250µA | TO-252 | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,936 | |
G15 Goford Semiconductor | 2.5V, 4.5V | ±8V | Surface Mount | -55°C ~ 150°C (TJ) | 8A (Tc) | 12 V | - | P-Channel | 48 nC @ 4.5 V | 2700 pF @ 10 V | 2W (Tc) | 21mOhm @ 1A, 4.5V | 1.2V @ 250µA | SOT-23-3 | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 8,432 | ||
G09P02L Goford Semiconductor | 1 $0.5400 | 2.5V, 4.5V | ±12V | Surface Mount | -55°C ~ 150°C (TJ) | 9A (Tc) | 20 V | - | P-Channel | 15 nC @ 4.5 V | 620 pF @ 10 V | 2.2W (Tc) | 23mOhm @ 1A, 4.5V | 1.2V @ 250µA | SOT-23-3 | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 5,228 |