Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing GeneSiC Semiconductor Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 58
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 G3R350MT12D GeneSiC Semiconductor | 1 $5.2200 | 15V | ±15V | Through Hole | -55°C ~ 175°C (TJ) | 11A (Tc) | 1200 V | - | N-Channel | 12 nC @ 15 V | 334 pF @ 800 V | 74W (Tc) | 420mOhm @ 4A, 15V | 2.69V @ 2mA | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 6,136 | |
G3R12MT12K GeneSiC Semiconductor | 1 $71.7900 | 15V, 18V | +22V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 157A (Tc) | 1200 V | - | N-Channel | 288 nC @ 15 V | 9335 pF @ 800 V | 567W (Tc) | 13mOhm @ 100A, 18V | 2.7V @ 50mA | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 4,528 | |
G2R50MT33K GeneSiC Semiconductor | 1 $325.2400 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 63A (Tc) | 3300 V | Standard | N-Channel | 340 nC @ 20 V | 7301 pF @ 1000 V | 536W (Tc) | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | 1,352 | |
G3R60MT07D GeneSiC Semiconductor | 1 $11.1600 | - | - | Through Hole | - | - | 750 V | - | - | - | - | - | - | - | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 2,156 | |
G3R60MT07J GeneSiC Semiconductor | 1 $11.7700 | - | - | Surface Mount | - | - | 750 V | - | - | - | - | - | - | - | TO-263-7 | SiCFET (Silicon Carbide) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 3,893 | |
GA05JT03-46 GeneSiC Semiconductor | 1 $70.3900 | - | - | Through Hole | -55°C ~ 225°C (TJ) | 9A (Tc) | 300 V | - | - | - | - | 20W (Tc) | 240mOhm @ 5A | - | TO-46 | SiC (Silicon Carbide Junction Transistor) | TO-46-3 | 3,792 | |
G3R450MT17D GeneSiC Semiconductor | 1 $7.9300 | 15V | ±15V | Through Hole | -55°C ~ 175°C (TJ) | 9A (Tc) | 1700 V | - | N-Channel | 18 nC @ 15 V | 454 pF @ 1000 V | 88W (Tc) | 585mOhm @ 4A, 15V | 2.7V @ 2mA | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 6,670 | |
G3R160MT12J GeneSiC Semiconductor | 1 $7.9800 | 15V | +20V, -10V | Surface Mount | -55°C ~ 175°C (TJ) | 19A (Tc) | 1200 V | - | N-Channel | 23 nC @ 15 V | 724 pF @ 800 V | 128W (Tc) | 208mOhm @ 10A, 15V | 2.7V @ 5mA (Typ) | TO-263-7 | SiCFET (Silicon Carbide) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 8,606 | |
GA50JT06-258 GeneSiC Semiconductor | 1 $693.0000 | - | - | Through Hole | -55°C ~ 225°C (TJ) | 100A (Tc) | 600 V | - | - | - | - | 769W (Tc) | 25mOhm @ 50A | - | TO-258 | SiC (Silicon Carbide Junction Transistor) | TO-258-3, TO-258AA | 3,043 | |
GA04JT17-247 GeneSiC Semiconductor | - | - | Through Hole | 175°C (TJ) | 4A (Tc) (95°C) | 1700 V | - | - | - | - | 106W (Tc) | 480mOhm @ 4A | - | TO-247AB | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 7,028 | ||
GA16JT17-247 GeneSiC Semiconductor | - | - | Through Hole | 175°C (TJ) | 16A (Tc) (90°C) | 1700 V | - | - | - | - | 282W (Tc) | 110mOhm @ 16A | - | TO-247AB | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 5,594 | ||
2N7635-GA GeneSiC Semiconductor | - | - | Through Hole | -55°C ~ 225°C (TJ) | 4A (Tc) (165°C) | 650 V | - | - | - | 324 pF @ 35 V | 47W (Tc) | 415mOhm @ 4A | - | TO-257 | SiC (Silicon Carbide Junction Transistor) | TO-257-3 | 5,886 | ||
2N7636-GA GeneSiC Semiconductor | - | - | Surface Mount | -55°C ~ 225°C (TJ) | 4A (Tc) (165°C) | 650 V | - | - | - | 324 pF @ 35 V | 125W (Tc) | 415mOhm @ 4A | - | TO-276 | SiC (Silicon Carbide Junction Transistor) | TO-276AA | 2,648 | ||
GA05JT12-263 GeneSiC Semiconductor | - | - | Surface Mount | 175°C (TJ) | 15A (Tc) | 1200 V | - | - | - | - | 106W (Tc) | - | - | TO-263-7 | SiC (Silicon Carbide Junction Transistor) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 4,667 | ||
GA05JT12-247 GeneSiC Semiconductor | - | - | Through Hole | 175°C (TJ) | 5A (Tc) | 1200 V | - | - | - | - | 106W (Tc) | 280mOhm @ 5A | - | TO-247AB | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 4,756 | ||
GA10JT12-247 GeneSiC Semiconductor | - | - | Through Hole | 175°C (TJ) | 10A (Tc) | 1200 V | - | - | - | - | 170W (Tc) | 140mOhm @ 10A | - | TO-247AB | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 8,780 | ||
GA20JT12-247 GeneSiC Semiconductor | - | - | Through Hole | 175°C (TJ) | 20A (Tc) | 1200 V | - | - | - | - | 282W (Tc) | 70mOhm @ 20A | - | TO-247AB | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 1,632 | ||
GA100JT17-227 GeneSiC Semiconductor | - | - | Chassis Mount | -55°C ~ 175°C (TJ) | 160A (Tc) | 1700 V | - | - | - | 14400 pF @ 800 V | 535W (Tc) | 10mOhm @ 100A | - | SOT-227 | SiC (Silicon Carbide Junction Transistor) | SOT-227-4, miniBLOC | 6,748 | ||
G3R60MT07K GeneSiC Semiconductor | 1 $11.4400 | - | - | Through Hole | - | - | 750 V | - | - | - | - | - | - | - | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | 1,862 | |
GA20JT12-263 GeneSiC Semiconductor | 1 $38.1300 | - | - | Surface Mount | 175°C (TJ) | 45A (Tc) | 1200 V | - | - | - | 3091 pF @ 800 V | 282W (Tc) | 60mOhm @ 20A | - | TO-263-7 | SiC (Silicon Carbide Junction Transistor) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 4,741 |