Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing GaNPower Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 9
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GPI65008DF56 GaNPower | 1 $4.0000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 8A | 650 V | - | N-Channel | 2.1 nC @ 6 V | 63 pF @ 400 V | - | - | 1.4V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 5,536 | |
GPI65010DF56 GaNPower | 1 $5.0000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 10A | 650 V | - | N-Channel | 2.6 nC @ 6 V | 90 pF @ 400 V | - | - | 1.4V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 9,006 | |
GPI65015TO GaNPower | 1 $7.5000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 15A | 650 V | - | N-Channel | 3.3 nC @ 6 V | 123 pF @ 400 V | - | - | 1.2V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 8,189 | |
GPIHV30DFN GaNPower | 1 $22.0000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 30A | 1200 V | - | N-Channel | 8.25 nC @ 6 V | 236 pF @ 400 V | - | - | 1.4V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 3,128 | |
GPI65005DF GaNPower | 1 $2.5000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 5A | 650 V | - | N-Channel | 2.6 nC @ 6 V | 45 pF @ 400 V | - | - | 1.4V @ 1.75mA | Die | GaNFET (Gallium Nitride) | Die | 4,471 | |
GPI65015DFN GaNPower | 1 $7.5000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 15A | 650 V | - | N-Channel | 3.3 nC @ 6 V | 116 pF @ 400 V | - | - | 1.2V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 4,107 | |
GPI65030DFN GaNPower | 1 $15.0000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 30A | 650 V | - | N-Channel | 5.8 nC @ 6 V | 241 pF @ 400 V | - | - | 1.2V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 9,055 | |
GPIHV30SB5L GaNPower | 1 $22.0000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 30A | 1200 V | - | N-Channel | 8.25 nC @ 6 V | 236 pF @ 400 V | - | - | 1.4V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 1,714 | |
GPI65060DFN GaNPower | 1 $30.0000 | 6V | +7.5V, -12V | Surface Mount | -55°C ~ 150°C (TJ) | 60A | 650 V | - | N-Channel | 16 nC @ 6 V | 420 pF @ 400 V | - | - | 1.2V @ 3.5mA | Die | GaNFET (Gallium Nitride) | Die | 2,699 |