Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Freescale / NXP Semiconductors Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 826
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 BSS84AK/DG/B2215 Freescale / NXP Semiconductors | 1 $0.6880 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100,000 | |
PSMN8R5-108ES127 Freescale / NXP Semiconductors | 1 $1.0000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8,132 | |
NX7002BKM315 Freescale / NXP Semiconductors | 1 $1.0000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1,692 | |
PH3120L,115-NXP Freescale / NXP Semiconductors | 1 $1.0000 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 100A (Tc) | 20 V | - | N-Channel | 48.5 nC @ 4.5 V | 4457 pF @ 10 V | 62.5W (Tc) | 2.65mOhm @ 25A, 10V | 2V @ 1mA | LFPAK56, Power-SO8 | MOSFET (Metal Oxide) | SC-100, SOT-669 | 1,776 | |
PSMN070-200P,127-NXP Freescale / NXP Semiconductors | 1 $1.0000 | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 35A (Tc) | 200 V | - | N-Channel | 77 nC @ 10 V | 4570 pF @ 25 V | 250W (Tc) | 70mOhm @ 17A, 10V | 4V @ 1mA | TO-220AB | MOSFET (Metal Oxide) | TO-220-3 | 4,761 | |
PSMN4R4-30MLC,115 Freescale / NXP Semiconductors | 1 $1.0000 | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 175°C (TJ) | 70A (Tc) | 30 V | - | N-Channel | 23 nC @ 10 V | 1515 pF @ 15 V | 69W (Tc) | 4.65mOhm @ 25A, 10V | 2.15V @ 1mA | LFPAK33 | MOSFET (Metal Oxide) | SOT-1210, 8-LFPAK33 (5-Lead) | 4,713 | |
PHB222NQ04LT,118 Freescale / NXP Semiconductors | 4.5V, 10V | ±15V | Surface Mount | -55°C ~ 175°C (TJ) | 75A (Tc) | 40 V | - | N-Channel | 93.6 nC @ 5 V | 7880 pF @ 25 V | 300W (Tc) | 2.8mOhm @ 25A, 10V | 2V @ 1mA | D2PAK | MOSFET (Metal Oxide) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3,245 | ||
PMXB75UPE147 Freescale / NXP Semiconductors | 1 $0.0600 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5,009 | |
IRF640,127 Freescale / NXP Semiconductors | 1 $1.6612 | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 16A (Tc) | 200 V | - | N-Channel | 63 nC @ 10 V | 1850 pF @ 25 V | 136W (Tc) | 180mOhm @ 8A, 10V | 4V @ 1mA | TO-220AB | MOSFET (Metal Oxide) | TO-220-3 | 100,000 | |
BS108,126 Freescale / NXP Semiconductors | 2.8V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 300mA (Ta) | 200 V | - | N-Channel | - | 120 pF @ 25 V | 1W (Ta) | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 4,977 | ||
BS108/01,126 Freescale / NXP Semiconductors | 2.8V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 300mA (Ta) | 200 V | - | N-Channel | - | 120 pF @ 25 V | 1W (Ta) | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 1,623 | ||
BSN254,126 Freescale / NXP Semiconductors | 2.4V, 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 310mA (Ta) | 250 V | - | N-Channel | - | 120 pF @ 25 V | 1W (Ta) | 5Ohm @ 300mA, 10V | 2V @ 1mA | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 1,187 | ||
BSN254A,126 Freescale / NXP Semiconductors | 2.4V, 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 310mA (Ta) | 250 V | - | N-Channel | - | 120 pF @ 25 V | 1W (Ta) | 5Ohm @ 300mA, 10V | 2V @ 1mA | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 9,064 | ||
BSN304,126 Freescale / NXP Semiconductors | 2.4V, 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 300mA (Ta) | 300 V | - | N-Channel | - | 120 pF @ 25 V | 1W (Ta) | 6Ohm @ 250mA, 10V | 2V @ 1mA | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 4,759 | ||
BUK9E3R7-60E,127 Freescale / NXP Semiconductors | 5V, 10V | ±10V | Through Hole | -55°C ~ 175°C (TJ) | 120A (Tc) | 60 V | - | N-Channel | 95 nC @ 5 V | 13490 pF @ 25 V | 293W (Tc) | 3.4mOhm @ 25A, 10V | 2.1V @ 1mA | I2PAK | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | 6,048 | ||
BUK9E4R4-80E,127 Freescale / NXP Semiconductors | 1 $1.2500 | 5V, 10V | ±10V | Through Hole | -55°C ~ 175°C (TJ) | 120A (Tc) | 80 V | - | N-Channel | 123 nC @ 5 V | 17130 pF @ 25 V | 349W (Tc) | 4.2mOhm @ 25A, 10V | 2.1V @ 1mA | I2PAK | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | 3,874 | |
BUK9E4R9-60E,127 Freescale / NXP Semiconductors | 1 $1.0000 | 5V, 10V | ±10V | Through Hole | -55°C ~ 175°C (TJ) | 100A (Tc) | 60 V | - | N-Channel | 65 nC @ 5 V | 9710 pF @ 25 V | 234W (Tc) | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | I2PAK | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | 9,228 | |
BUK9E6R1-100E,127 Freescale / NXP Semiconductors | 1 $1.2500 | 5V, 10V | ±10V | Through Hole | -55°C ~ 175°C (TJ) | 120A (Tc) | 100 V | - | N-Channel | 133 nC @ 5 V | 17460 pF @ 25 V | 349W (Tc) | 5.9mOhm @ 25A, 10V | 2.1V @ 1mA | I2PAK | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | 6,520 | |
BUK9E8R5-40E,127 Freescale / NXP Semiconductors | 1 $1.0000 | 5V, 10V | ±10V | Through Hole | -55°C ~ 175°C (TJ) | 75A (Tc) | 40 V | - | N-Channel | 20.9 nC @ 5 V | 2600 pF @ 25 V | 96W (Tc) | 6.6mOhm @ 20A, 10V | 2.1V @ 1mA | I2PAK | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | 3,916 | |
BUK9E1R8-40E,127 Freescale / NXP Semiconductors | 5V, 10V | ±10V | Through Hole | -55°C ~ 175°C (TJ) | 120A (Tc) | 40 V | - | N-Channel | 120 nC @ 5 V | 16400 pF @ 25 V | 349W (Tc) | 1.7mOhm @ 25A, 10V | 2.1V @ 1mA | I2PAK | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | 8,020 |