Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing UnitedSiC Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 68
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 UJ4SC075006K4S UnitedSiC | 1 $68.4000 | 12V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 120A (Tc) | 750 V | - | N-Channel | 164 nC @ 15 V | 8374 pF @ 400 V | 714W (Tc) | 7.4mOhm @ 80A, 12V | 6V @ 10mA | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | 5,465 | |
UF3SC120009K4S UnitedSiC | 1 $86.7700 | 12V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 120A (Tc) | 1200 V | - | N-Channel | 234 nC @ 15 V | 8512 pF @ 100 V | 789W (Tc) | 11mOhm @ 100A, 12V | 6V @ 10mA | TO-247-4 | SiCFET (Cascode SiCJFET) | TO-247-4 | 2,638 | |
UF3C120400K3S UnitedSiC | 1 $7.7800 | 12V | ±25V | Through Hole | -55°C ~ 175°C (TJ) | 7.6A (Tc) | 1200 V | - | N-Channel | 27 nC @ 15 V | 740 pF @ 100 V | 100W (Tc) | 515mOhm @ 5A, 12V | 6V @ 10mA | TO-247-3 | SiCFET (Cascode SiCJFET) | TO-247-3 | 7,768 | |
UF3C120150B7S UnitedSiC | 1 $8.9300 | 12V | ±25V | Surface Mount | -55°C ~ 175°C (TJ) | 17A (Tc) | 1200 V | Super Junction | N-Channel | 25.7 nC @ 12 V | 738 pF @ 100 V | 136W (Tc) | 180mOhm @ 5A, 12V | 5.5V @ 10mA | D2PAK-7 | SiCFET (Cascode SiCJFET) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 3,687 | |
UF3C065080B7S UnitedSiC | 1 $9.3700 | - | ±25V | Surface Mount | -55°C ~ 175°C (TJ) | 27A (Tc) | 650 V | - | N-Channel | 23 nC @ 12 V | 760 pF @ 100 V | 136.4W (Tc) | 105mOhm @ 20A, 12V | 6V @ 10mA | D2PAK-7 | SiCFET (Cascode SiCJFET) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 4,837 | |
UF3C065080T3S UnitedSiC | 1 $7.9200 | 12V | ±25V | Through Hole | -55°C ~ 175°C (TJ) | 31A (Tc) | 650 V | - | N-Channel | 51 nC @ 15 V | 1500 pF @ 100 V | 190W (Tc) | 100mOhm @ 20A, 12V | 6V @ 10mA | TO-220-3 | - | TO-220-3 | 2,636 | |
UJ3C065080T3S UnitedSiC | 1 $7.9200 | 12V | ±25V | Through Hole | -55°C ~ 175°C (TJ) | 31A (Tc) | 650 V | - | N-Channel | 51 nC @ 15 V | 1500 pF @ 100 V | 190W (Tc) | 100mOhm @ 20A, 12V | 6V @ 10mA | TO-220-3 | - | TO-220-3 | 4,916 | |
UF3C065080K3S UnitedSiC | 1 $8.5100 | 12V | ±25V | Through Hole | -55°C ~ 175°C (TJ) | 31A (Tc) | 650 V | - | N-Channel | 51 nC @ 15 V | 1500 pF @ 100 V | 190W (Tc) | 100mOhm @ 20A, 12V | 6V @ 10mA | TO-247-3 | - | TO-247-3 | 7,301 | |
UF3C120080B7S UnitedSiC | 1 $13.7100 | - | ±25V | Surface Mount | -55°C ~ 175°C (TJ) | 28.8A (Tc) | 1200 V | - | N-Channel | 23 nC @ 12 V | 754 pF @ 100 V | 190W (Tc) | 105mOhm @ 20A, 12V | 6V @ 10mA | D2PAK-7 | SiCFET (Cascode SiCJFET) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 9,564 | |
UF3C065040B3 UnitedSiC | 1 $13.7100 | 12V | ±25V | Surface Mount | -55°C ~ 175°C (TJ) | 41A (Tc) | 650 V | - | N-Channel | 51 nC @ 15 V | 1500 pF @ 100 V | 176W (Tc) | 52mOhm @ 30A, 12V | 6V @ 10mA | TO-263 (D2Pak) | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 4,978 | |
UJ4C075060K3S UnitedSiC | 1 $10.0100 | - | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 28A (Tc) | 750 V | - | N-Channel | 37.8 nC @ 15 V | 1422 pF @ 100 V | 155W (Tc) | 74mOhm @ 20A, 12V | 6V @ 10mA | TO-247-3 | SiCFET (Cascode SiCJFET) | TO-247-3 | 3,375 | |
UF3C065080B3 UnitedSiC | 1 $7.9200 | - | - | Surface Mount | - | 25A (Tc) | 650 V | - | N-Channel | - | - | - | - | - | TO-263 (D2Pak) | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 6,237 | |
UF3C120150K3S UnitedSiC | - | - | Through Hole | - | 18.4A (Tc) | 1200 V | - | N-Channel | - | - | - | - | - | TO-247-3 | SiCFET (Cascode SiCJFET) | TO-247-3 | 6,673 | ||
UF3SC065030D8S UnitedSiC | 12V | ±25V | Surface Mount | -55°C ~ 150°C (TJ) | 18A (Tc) | 650 V | - | N-Channel | 43 nC @ 12 V | 1500 pF @ 100 V | 179W (Tc) | 42mOhm @ 20A, 12V | 6V @ 10mA | 4-DFN (8x8) | SiCFET (Cascode SiCJFET) | 4-PowerTSFN | 4,723 | ||
UF3SC065040D8S UnitedSiC | 12V | ±25V | Surface Mount | -55°C ~ 150°C (TJ) | 18A (Tc) | 650 V | - | N-Channel | 43 nC @ 12 V | 1500 pF @ 100 V | 125W (Tc) | 58mOhm @ 20A, 12V | 6V @ 10mA | 4-DFN (8x8) | SiCFET (Cascode SiCJFET) | 4-PowerTSFN | 2,595 | ||
UJ4C075044K3S UnitedSiC | 1 $12.1700 | 12V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 37.4A (Tc) | 750 V | - | N-Channel | 37.8 nC @ 15 V | 1400 pF @ 400 V | 203W (Tc) | 56mOhm @ 25A, 12V | 6V @ 10mA | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 9,982 | |
UJ4C075044K4S UnitedSiC | 1 $12.7100 | 12V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 37.4A (Tc) | 750 V | - | N-Channel | 37.8 nC @ 15 V | 1400 pF @ 400 V | 203W (Tc) | 56mOhm @ 25A, 12V | 6V @ 10mA | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | 3,894 | |
UF4C120070K3S UnitedSiC | 1 $13.8400 | - | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 27.5A (Tc) | 1200 V | - | N-Channel | 37.8 nC @ 15 V | 1370 pF @ 800 V | 217W (Tc) | 91mOhm @ 20A, 12V | 6V @ 10mA | TO-247-3 | SiCFET (Cascode SiCJFET) | TO-247-3 | 9,081 | |
UF4C120070K4S UnitedSiC | 1 $14.4300 | - | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 27.5A (Tc) | 1200 V | - | N-Channel | 37.8 nC @ 15 V | 1370 pF @ 800 V | 217W (Tc) | 91mOhm @ 20A, 12V | 6V @ 10mA | TO-247-4 | SiCFET (Cascode SiCJFET) | TO-247-4 | 7,423 | |
UF4C120053K4S UnitedSiC | 1 $16.7600 | 12V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 34A (Tc) | 1200 V | - | N-Channel | 37.8 nC @ 15 V | 1370 pF @ 800 V | 263W (Tc) | 67mOhm @ 20A, 12V | 6V @ 10mA | TO-247-4 | SiCFET (Cascode SiCJFET) | TO-247-4 | 1,280 |