Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing SMC Diode Solutions Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 6
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 S2M0080120D SMC Diode Solutions | 1 $1.2000 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 41A (Tc) | 1200 V | - | N-Channel | 54 nC @ 20 V | 1324 pF @ 1000 V | 231W (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | TO-247AD | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 100,000 | |
S2M0080120K SMC Diode Solutions | 1 $1.2000 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 41A (Tc) | 1200 V | - | N-Channel | 54 nC @ 20 V | 1324 pF @ 1000 V | 231W (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 100,000 | |
S2M0040120D SMC Diode Solutions | 1 $1.2000 | - | - | Through Hole | - | - | 1200 V | - | - | - | - | - | - | - | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 100,000 | |
S2M0040120K SMC Diode Solutions | 1 $1.2000 | - | - | Through Hole | - | - | 1200 V | - | - | - | - | - | - | - | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 100,000 | |
S2M0025120D SMC Diode Solutions | 1 $1.2000 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 63A (Tj) | 1200 V | - | N-Channel | 130 nC @ 20 V | 4402 pF @ 1000 V | 446W (Tc) | 34mOhm @ 50A, 20V | 4V @ 15mA | TO-247AD | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 100,000 | |
S2M0025120K SMC Diode Solutions | 1 $1.2000 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 63A (Tc) | 1200 V | - | N-Channel | 130 nC @ 20 V | 4402 pF @ 1000 V | 446W (Tc) | 34mOhm @ 50A, 20V | 4V @ 15mA | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 100,000 |