Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing SemiQ Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 6
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GP2T080A120U SemiQ | 1 $12.4400 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 35A (Tc) | 1200 V | - | N-Channel | 58 nC @ 20 V | 1377 pF @ 1000 V | 188W (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 9,976 | |
GP2T080A120H SemiQ | 1 $11.6200 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 35A (Tc) | 1200 V | - | N-Channel | 61 nC @ 20 V | 1377 pF @ 1000 V | 188W (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | 2,341 | |
GP2T040A120U SemiQ | 1 $21.8300 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 63A (Tc) | 1200 V | - | N-Channel | 118 nC @ 20 V | 3192 pF @ 1000 V | 322W (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | TO-247-3 | 7,533 | |
GP2T040A120H SemiQ | 1 $22.2900 | 20V | +25V, -10V | Through Hole | -55°C ~ 175°C (TJ) | 63A (Tc) | 1200 V | - | N-Channel | 118 nC @ 20 V | 3192 pF @ 1000 V | 322W (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 1,702 | |
GCMX080B120S1-E1 SemiQ | 1 $23.3200 | 20V | +25V, -10V | Chassis Mount | -55°C ~ 175°C (TJ) | 30A (Tc) | 1200 V | - | N-Channel | 58 nC @ 20 V | 1336 pF @ 1000 V | 142W (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | SOT-227 | SiCFET (Silicon Carbide) | SOT-227-4, miniBLOC | 2,912 | |
GCMS080B120S1-E1 SemiQ | 1 $25.9600 | 20V | +25V, -10V | Chassis Mount | -55°C ~ 175°C (TJ) | 30A (Tc) | 1200 V | - | N-Channel | 58 nC @ 20 V | 1374 pF @ 1000 V | 142W (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | SOT-227 | SiCFET (Silicon Carbide) | SOT-227-4, miniBLOC | 5,541 |