Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Microsemi Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 337
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 APT6M100K Microsemi | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 6A (Tc) | 1000 V | - | N-Channel | 43 nC @ 10 V | 1410 pF @ 25 V | 225W (Tc) | 2.5Ohm @ 3A, 10V | 5V @ 1mA | TO-220 [K] | MOSFET (Metal Oxide) | TO-220-3 | 7,083 | ||
APT7F80K Microsemi | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 7A (Tc) | 800 V | - | N-Channel | 43 nC @ 10 V | 1335 pF @ 25 V | 225W (Tc) | 1.5Ohm @ 4A, 10V | 5V @ 500µA | TO-220 [K] | MOSFET (Metal Oxide) | TO-220-3 | 2,905 | ||
APT8024LLLG Microsemi | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 31A (Tc) | 800 V | - | N-Channel | 160 nC @ 10 V | 4670 pF @ 25 V | 565W (Tc) | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | TO-264 [L] | MOSFET (Metal Oxide) | TO-264-3, TO-264AA | 5,479 | ||
APT8024LVRG Microsemi | 10V | - | Through Hole | - | 33A (Tc) | 800 V | - | N-Channel | 425 nC @ 10 V | 7740 pF @ 25 V | - | 240mOhm @ 16.5A, 10V | 4V @ 2.5mA | TO-264 [L] | MOSFET (Metal Oxide) | TO-264-3, TO-264AA | 9,412 | ||
APT8M80K Microsemi | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 8A (Tc) | 800 V | - | N-Channel | 43 nC @ 10 V | 1335 pF @ 25 V | 225W (Tc) | 1.35Ohm @ 4A, 10V | 5V @ 500µA | TO-220 [K] | MOSFET (Metal Oxide) | TO-220-3 | 2,626 | ||
APTM120UM95FAG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 103A (Tc) | 1200 V | - | N-Channel | 1122 nC @ 10 V | 30900 pF @ 25 V | 2272W (Tc) | 114mOhm @ 51.5A, 10V | 5V @ 15mA | SP6 | MOSFET (Metal Oxide) | SP6 | 1,128 | ||
APTM20DAM10TG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 175A (Tc) | 200 V | - | N-Channel | 224 nC @ 10 V | 13700 pF @ 25 V | 694W (Tc) | 12mOhm @ 87.5A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 2,169 | ||
APTM20SKM05G Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 317A (Tc) | 200 V | - | N-Channel | 448 nC @ 10 V | 27400 pF @ 25 V | 1136W (Tc) | 6mOhm @ 158.5A, 10V | 5V @ 10mA | SP6 | MOSFET (Metal Oxide) | SP6 | 6,460 | ||
APTM20SKM10TG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 175A (Tc) | 200 V | - | N-Channel | 224 nC @ 10 V | 13700 pF @ 25 V | 694W (Tc) | 12mOhm @ 87.5A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 6,795 | ||
APTM20UM05SG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 317A (Tc) | 200 V | - | N-Channel | 448 nC @ 10 V | 27400 pF @ 25 V | 1136W (Tc) | 5mOhm @ 158.5A, 10V | 5V @ 10mA | Module | MOSFET (Metal Oxide) | J3 Module | 4,597 | ||
APTM20UM09SG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 195A (Tc) | 200 V | - | N-Channel | 217 nC @ 10 V | 12300 pF @ 25 V | 780W (Tc) | 9mOhm @ 74.5A, 10V | 5V @ 4mA | Module | MOSFET (Metal Oxide) | J3 Module | 1,600 | ||
APTM50DAM35TG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 99A (Tc) | 500 V | - | N-Channel | 280 nC @ 10 V | 14000 pF @ 25 V | 781W (Tc) | 39mOhm @ 49.5A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 2,210 | ||
APTM50DAM38CTG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 90A (Tc) | 500 V | - | N-Channel | 246 nC @ 10 V | 11200 pF @ 25 V | 694W (Tc) | 45mOhm @ 45A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 5,251 | ||
APTM50DAM38TG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 90A (Tc) | 500 V | - | N-Channel | 246 nC @ 10 V | 11200 pF @ 25 V | 694W (Tc) | 45mOhm @ 45A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 9,627 | ||
APTM50SKM35TG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 99A (Tc) | 500 V | - | N-Channel | 280 nC @ 10 V | 14000 pF @ 25 V | 781W (Tc) | 39mOhm @ 49.5A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 4,380 | ||
APTM50SKM38TG Microsemi | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 90A (Tc) | 500 V | - | N-Channel | 246 nC @ 10 V | 11200 pF @ 25 V | 694W (Tc) | 45mOhm @ 45A, 10V | 5V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 1,019 | ||
APTC90SKM60T1G Microsemi | 10V | ±20V | Chassis Mount | -40°C ~ 150°C (TJ) | 59A (Tc) | 900 V | Super Junction | N-Channel | 540 nC @ 10 V | 13600 pF @ 100 V | 462W (Tc) | 60mOhm @ 52A, 10V | 3.5V @ 6mA | SP1 | MOSFET (Metal Oxide) | SP1 | 8,654 | ||
JANSR2N7381 Microsemi | 12V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 9.4A (Tc) | 200 V | - | N-Channel | 50 nC @ 12 V | - | 2W (Ta), 75W (Tc) | 490mOhm @ 9.4A, 12V | 4V @ 1mA | TO-257 | MOSFET (Metal Oxide) | TO-257-3 | 7,836 | ||
JANSR2N7389 Microsemi | 12V | ±20V | Through Hole | -55°C ~ 150°C | 6.5A (Tc) | 100 V | - | P-Channel | 45 nC @ 12 V | - | 25W (Tc) | 350mOhm @ 6.5A, 12V | 4V @ 1mA | TO-205AF (TO-39) | MOSFET (Metal Oxide) | TO-205AF Metal Can | 3,087 | ||
JANSR2N7389U Microsemi | 12V | ±20V | Surface Mount | -55°C ~ 150°C | 6.5A (Tc) | 100 V | - | P-Channel | 45 nC @ 12 V | - | 25W (Tc) | 350mOhm @ 6.5A, 12V | 4V @ 1mA | 18-ULCC (9.14x7.49) | MOSFET (Metal Oxide) | 18-CLCC | 8,926 |