Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Microchip Technology Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 704
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 APT41F100J Microchip Technology | 1 $67.5000 | 10V | ±30V | Chassis Mount | -55°C ~ 150°C (TJ) | 42A (Tc) | 1000 V | - | N-Channel | 570 nC @ 10 V | 18500 pF @ 25 V | 960W (Tc) | 210mOhm @ 33A, 10V | 5V @ 5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 4,266 | |
LND150N3-G Microchip Technology | 1 $6.8400 100 $5.4720 500 $4.5600 | 0V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 30mA (Tj) | 500 V | Depletion Mode | N-Channel | - | 10 pF @ 25 V | 740mW (Ta) | 1000Ohm @ 500µA, 0V | - | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) | 1,000 | |
VN10KN3-G Microchip Technology | 1 $0.6300 | 5V, 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 310mA (Tj) | 60 V | - | N-Channel | - | 60 pF @ 25 V | 1W (Tc) | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | TO-92-3 | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) | 3,381 | |
APT5010JVFR Microchip Technology | 1 $41.0500 | - | - | Chassis Mount | - | 44A (Tc) | 500 V | - | N-Channel | 470 nC @ 10 V | 8900 pF @ 25 V | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 7,792 | |
APT8030JVFR Microchip Technology | 1 $41.0500 | - | - | Chassis Mount | - | 25A (Tc) | 800 V | - | N-Channel | 510 nC @ 10 V | 7900 pF @ 25 V | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 8,890 | |
TN2501N8-G Microchip Technology | 1 $1.2980 | 1.2V, 3V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 400mA (Tj) | 18 V | - | N-Channel | - | 110 pF @ 15 V | 1.6W (Tc) | 2.5Ohm @ 200mA, 3V | 1V @ 1mA | TO-243AA (SOT-89) | MOSFET (Metal Oxide) | TO-243AA | 3,448 | |
APT56F60L Microchip Technology | 1 $17.6440 | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 60A (Tc) | 600 V | - | N-Channel | 280 nC @ 10 V | 11300 pF @ 25 V | 1040W (Tc) | 110mOhm @ 28A, 10V | 5V @ 2.5mA | TO-264 [L] | MOSFET (Metal Oxide) | TO-264-3, TO-264AA | 6,887 | |
APT5010B2LLG Microchip Technology | 1 $17.6660 | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 46A (Tc) | 500 V | - | N-Channel | 95 nC @ 10 V | 4360 pF @ 25 V | 520W (Tc) | 100mOhm @ 23A, 10V | 5V @ 2.5mA | T-MAX™ [B2] | MOSFET (Metal Oxide) | TO-247-3 Variant | 3,821 | |
APT29F80J Microchip Technology | 1 $36.3790 | 10V | ±30V | Chassis Mount | -55°C ~ 150°C (TJ) | 31A (Tc) | 800 V | - | N-Channel | 303 nC @ 10 V | 9326 pF @ 25 V | 543W (Tc) | 210mOhm @ 24A, 10V | 5V @ 2.5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 8,329 | |
APT58M50JCU2 Microchip Technology | 1 $36.3793 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 58A (Tc) | 500 V | - | N-Channel | 340 nC @ 10 V | 10800 pF @ 25 V | 543W (Tc) | 65mOhm @ 42A, 10V | 5V @ 2.5mA | SOT-227 | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 5,593 | |
APT22F120B2 Microchip Technology | 1 $36.4650 | 10V | ±30V | Through Hole | -55°C ~ 150°C (TJ) | 23A (Tc) | 1200 V | - | N-Channel | 260 nC @ 10 V | 8370 pF @ 25 V | 1040W (Tc) | 700mOhm @ 12A, 10V | 5V @ 2.5mA | T-MAX™ [B2] | MOSFET (Metal Oxide) | TO-247-3 Variant | 1,975 | |
APT50M75JLL Microchip Technology | 1 $36.5090 | - | - | Chassis Mount | - | 51A (Tc) | 500 V | - | N-Channel | 125 nC @ 10 V | 5590 pF @ 25 V | - | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 1,100 | |
APTM10DAM05TG Microchip Technology | 1 $127.8150 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 278A (Tc) | 100 V | - | N-Channel | 700 nC @ 10 V | 20000 pF @ 25 V | 780W (Tc) | 5mOhm @ 125A, 10V | 4V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 1,266 | |
APTM10SKM05TG Microchip Technology | 1 $127.8150 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 278A (Tc) | 100 V | - | N-Channel | 700 nC @ 10 V | 20000 pF @ 25 V | 780W (Tc) | 5mOhm @ 125A, 10V | 4V @ 5mA | SP4 | MOSFET (Metal Oxide) | SP4 | 7,963 | |
APTC60DAM18CTG Microchip Technology | 1 $181.1543 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 143A (Tc) | 600 V | - | N-Channel | 1036 nC @ 10 V | 28000 pF @ 25 V | 833W (Tc) | 18mOhm @ 71.5A, 10V | 3.9V @ 4mA | SP4 | MOSFET (Metal Oxide) | SP4 | 8,019 | |
APTM50DAM19G Microchip Technology | 1 $202.6300 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 163A (Tc) | 500 V | - | N-Channel | 492 nC @ 10 V | 22400 pF @ 25 V | 1136W (Tc) | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | SP6 | MOSFET (Metal Oxide) | SP6 | 6,206 | |
APTM50SKM19G Microchip Technology | 1 $202.6300 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 163A (Tc) | 500 V | - | N-Channel | 492 nC @ 10 V | 22400 pF @ 25 V | 1136W (Tc) | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | SP6 | MOSFET (Metal Oxide) | SP6 | 5,975 | |
APTM20DAM05G Microchip Technology | 1 $206.7950 | 10V | ±30V | Chassis Mount | -40°C ~ 150°C (TJ) | 317A (Tc) | 200 V | - | N-Channel | 448 nC @ 10 V | 27400 pF @ 25 V | 1136W (Tc) | 6mOhm @ 158.5A, 10V | 5V @ 10mA | SP6 | MOSFET (Metal Oxide) | SP6 | 1,255 | |
APT8014JLL Microchip Technology | 10V | ±30V | Chassis Mount | -55°C ~ 150°C (TJ) | 42A (Tc) | 800 V | - | N-Channel | 285 nC @ 10 V | 7238 pF @ 25 V | 595W (Tc) | 140mOhm @ 21A, 10V | 5V @ 5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 1,275 | ||
APT8024JLL Microchip Technology | 10V | ±30V | Chassis Mount | -55°C ~ 150°C (TJ) | 29A (Tc) | 800 V | - | N-Channel | 160 nC @ 10 V | 4670 pF @ 25 V | 460W (Tc) | 240mOhm @ 14.5A, 10V | 5V @ 2.5mA | ISOTOP® | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 5,661 |