Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Sourcing Infineon Technologies Transistors - FETs, MOSFETs - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 8,427
| Product | Pricing | Datasheet | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 IPD80R1K2P7ATMA1 Infineon Technologies | 1 $1.6200 | 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 4.5A (Tc) | 800 V | - | N-Channel | 11 nC @ 10 V | 300 pF @ 500 V | 37W (Tc) | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | PG-TO252-3 | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5,309 | |
IPA95R1K2P7XKSA1 Infineon Technologies | 1 $2.2000 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 6A (Tc) | 950 V | - | N-Channel | 15 nC @ 10 V | 478 pF @ 400 V | 27W (Tc) | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | PG-TO220-FP | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 4,419 | |
IPA60R060P7XKSA1 Infineon Technologies | 1 $7.7700 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 48A (Tc) | 600 V | - | N-Channel | 67 nC @ 10 V | 2895 pF @ 400 V | 29W (Tc) | 60mOhm @ 15.9A, 10V | 4V @ 800µA | PG-TO220-FP | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 6,725 | |
SPW16N50C3FKSA1 Infineon Technologies | 1 $1.0000 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 16A (Tc) | 560 V | - | N-Channel | 66 nC @ 10 V | 1600 pF @ 25 V | 160W (Tc) | 280mOhm @ 10A, 10V | 3.9V @ 675µA | PG-TO247-3-1 | MOSFET (Metal Oxide) | TO-247-3 | 1,458 | |
IRF1010EPBF Infineon Technologies | 1 $0.5880 100 $0.4704 500 $0.3920 | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 84A (Tc) | 60 V | - | N-Channel | 130 nC @ 10 V | 3210 pF @ 25 V | 200W (Tc) | 12mOhm @ 50A, 10V | 4V @ 250µA | TO-220AB | MOSFET (Metal Oxide) | TO-220-3 | 1,000 | |
IPF016N10NF2SATMA1 Infineon Technologies | 1 $4.5033 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2,923 | |
IPP60R120P7XKSA1 Infineon Technologies | 1 $4.7600 | 10V | ±20V | Through Hole | -55°C ~ 150°C (TJ) | 26A (Tc) | 600 V | - | N-Channel | 36 nC @ 10 V | 1544 pF @ 400 V | 95W (Tc) | 120mOhm @ 8.2A, 10V | 4V @ 410µA | PG-TO220-3 | MOSFET (Metal Oxide) | TO-220-3 | 9,884 | |
IRF3704 Infineon Technologies | 4.5V, 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 77A (Tc) | 20 V | - | N-Channel | 19 nC @ 4.5 V | 1996 pF @ 10 V | 87W (Tc) | 9mOhm @ 15A, 10V | 3V @ 250µA | TO-220AB | MOSFET (Metal Oxide) | TO-220-3 | 8,946 | ||
IRLR8103 Infineon Technologies | 4.5V, 10V | ±20V | Surface Mount | - | 89A (Ta) | 30 V | - | N-Channel | 50 nC @ 5 V | - | 89W (Ta) | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | D-Pak | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,382 | ||
IRFU3704 Infineon Technologies | 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 75A (Tc) | 20 V | - | N-Channel | 19 nC @ 4.5 V | 1996 pF @ 10 V | 90W (Tc) | 9.5mOhm @ 15A, 10V | 3V @ 250µA | IPAK (TO-251AA) | MOSFET (Metal Oxide) | TO-251-3 Short Leads, IPak, TO-251AA | 2,497 | ||
IPP05N03LA Infineon Technologies | 4.5V, 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 80A (Tc) | 25 V | - | N-Channel | 25 nC @ 5 V | 3110 pF @ 15 V | 94W (Tc) | 4.9mOhm @ 55A, 10V | 2V @ 50µA | PG-TO220-3 | MOSFET (Metal Oxide) | TO-220-3 | 1,435 | ||
IRL1404ZSTRL Infineon Technologies | 4.5V, 10V | ±16V | Surface Mount | -55°C ~ 175°C (TJ) | 75A (Tc) | 40 V | - | N-Channel | 110 nC @ 5 V | 5080 pF @ 25 V | 230W (Tc) | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | D2PAK | MOSFET (Metal Oxide) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3,434 | ||
IRFS59N10DPBF Infineon Technologies | 1 $1.0000 | 10V | ±30V | Surface Mount | -55°C ~ 175°C (TJ) | 59A (Tc) | 100 V | - | N-Channel | 114 nC @ 10 V | 2450 pF @ 25 V | 3.8W (Ta), 200W (Tc) | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | D2PAK | MOSFET (Metal Oxide) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8,907 | |
IRF3205ZSTRRPBF Infineon Technologies | 1 $6.3120 | 10V | ±20V | Surface Mount | -55°C ~ 175°C (TJ) | 75A (Tc) | 55 V | - | N-Channel | 110 nC @ 10 V | 3450 pF @ 25 V | 170W (Tc) | 6.5mOhm @ 66A, 10V | 4V @ 250µA | D2PAK | MOSFET (Metal Oxide) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 100,000 | |
IPP07N03LB G Infineon Technologies | 4.5V, 10V | ±20V | Through Hole | -55°C ~ 175°C (TJ) | 50A (Tc) | 30 V | - | N-Channel | 25 nC @ 5 V | 2782 pF @ 15 V | 94W (Tc) | 6.6mOhm @ 50A, 10V | 2V @ 40µA | PG-TO220-3-1 | MOSFET (Metal Oxide) | TO-220-3 | 4,503 | ||
BSC029N025S G Infineon Technologies | 4.5V, 10V | ±20V | Surface Mount | -55°C ~ 150°C (TJ) | 24A (Ta), 100A (Tc) | 25 V | - | N-Channel | 41 nC @ 5 V | 5090 pF @ 15 V | 2.8W (Ta), 78W (Tc) | 2.9mOhm @ 50A, 10V | 2V @ 80µA | PG-TDSON-8-1 | MOSFET (Metal Oxide) | 8-PowerTDFN | 9,123 | ||
IRFR6215CPBF Infineon Technologies | - | - | Surface Mount | - | 13A (Tc) | 150 V | - | P-Channel | 66 nC @ 10 V | 860 pF @ 25 V | 110W (Tc) | 295mOhm @ 6.6A, 10V | 4V @ 250µA | D-Pak | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2,313 | ||
IRFR3706CTRRPBF Infineon Technologies | 2.8V, 10V | ±12V | Surface Mount | -55°C ~ 175°C (TJ) | 75A (Tc) | 20 V | - | N-Channel | 35 nC @ 4.5 V | 2410 pF @ 10 V | 88W (Tc) | 9mOhm @ 15A, 10V | 2V @ 250µA | D-Pak | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4,148 | ||
IPB06CN10N G Infineon Technologies | 10V | ±20V | Surface Mount | -55°C ~ 175°C (TJ) | 100A (Tc) | 100 V | - | N-Channel | 139 nC @ 10 V | 9200 pF @ 50 V | 214W (Tc) | 6.2mOhm @ 100A, 10V | 4V @ 180µA | PG-TO263-3 | MOSFET (Metal Oxide) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 7,850 | ||
IRFH3702TR2PBF Infineon Technologies | - | - | Surface Mount | - | 16A (Ta), 42A (Tc) | 30 V | - | N-Channel | 14 nC @ 4.5 V | 1510 pF @ 15 V | - | 7.1mOhm @ 16A, 10V | 2.35V @ 25µA | 8-PQFN (3x3) | MOSFET (Metal Oxide) | 8-PowerVDFN | 5,385 |