Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Sourcing General Electric Transistors - FETs, MOSFETs - Arrays: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 6
| Product | Pricing | Datasheet | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power - Max | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GE12047CCA3 General Electric | 1 $1.0000 | Chassis Mount | -55°C ~ 150°C (Tc) | 475A | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1248nC @ 18V | 29300pF @ 600V | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1250W | - | Module | 6,378 | |
GE12047BCA3 General Electric | 1 $1.0000 | Chassis Mount | -55°C ~ 150°C (Tc) | 475A | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 Independent | 1248nC @ 18V | 29300pF @ 600V | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1250W | - | Module | 4,723 | |
GE17042CCA3 General Electric | 1 $1.0000 | Chassis Mount | 175°C (TJ) | 425A (Tc) | 1700V (1.7kV) | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 18V | 29100pF @ 900V | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1250W | - | Module | 3,484 | |
GE17042BCA3 General Electric | 1 $1.0000 | Chassis Mount | 175°C (TJ) | 425A (Tc) | 1700V (1.7kV) | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 18V | 29100pF @ 900V | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1250W | - | Module | 2,252 | |
GE17080CDA3 General Electric | 1 $2.0000 | Chassis Mount | -55°C ~ 150°C (Tc) | 765A | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 2414nC @ 18V | 58000pF @ 900V | 2.23mOhm @ 765A, 20V | 4.5V @ 160mA | 2350W | - | Module | 8,809 | |
GE17045EEA3 General Electric | 1 $3.0000 | Chassis Mount | -55°C ~ 150°C (Tc) | 425A (Tc) | 1700V (1.7kV) | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1207nC @ 18V | 29100pF @ 900V | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1250W (Tc) | - | Module | 9,288 |