Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Sourcing Microchip Technology Transistors - FETs, MOSFETs - Arrays: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 300
| Product | Pricing | Datasheet | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power - Max | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MSCSM70DUM017AG Microchip Technology | 1 $899.6100 | Chassis Mount | -40°C ~ 175°C (TJ) | 1021A (Tc) | 700V | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 1935nC @ 20V | 40500pF @ 700V | 2.1mOhm @ 360A, 20V | 2.4V @ 36mA | 2750W (Tc) | - | Module | 2,162 | |
MSCSM170TLM11CAG Microchip Technology | 1 $955.9300 | Chassis Mount | -40°C ~ 175°C (TJ) | 238A (Tc) | 1700V (1.7kV) | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 712nC @ 20V | 13200pF @ 1000V | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 1114W (Tc) | SP6C | Module | 2,418 | |
MSCSM120DUM027AG Microchip Technology | 1 $986.2200 | Chassis Mount | -40°C ~ 175°C (TJ) | 733A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 2088nC @ 20V | 27000pF @ 1000V | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2968W (Tc) | - | Module | 4,606 | |
MSCSM70TLM05CAG Microchip Technology | 1 $996.3500 | Chassis Mount | -40°C ~ 175°C (TJ) | 464A (Tc) | 700V | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 860nC @ 20V | 18000pF @ 700V | 4.8mOhm @ 160A, 20V | 2.4V @ 16mA | 1277W (Tc) | SP6C | Module | 5,774 | |
MSCSM120TLM08CAG Microchip Technology | 1 $1.0000 | Chassis Mount | -40°C ~ 175°C (TJ) | 333A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 928nC @ 20V | 12000pF @ 1000V | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 1378W (Tc) | SP6C | Module | 5,054 | |
MSCSM170TAM15CTPAG Microchip Technology | 1 $1.0000 | Chassis Mount | -40°C ~ 175°C (TJ) | 179A (Tc) | 1700V (1.7kV) | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | 534nC @ 20V | 9900pF @ 1000V | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 843W (Tc) | - | Module | 6,947 | |
MSCSM170AM039CT6AG Microchip Technology | 1 $1.0000 | Chassis Mount | -40°C ~ 175°C (TJ) | 523A (Tc) | 1700V (1.7kV) | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1602nC @ 20V | 29700pF @ 1000V | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 2.4kW (Tc) | - | Module | 9,576 | |
TC8220K6-G Microchip Technology | 1 $2.6800 | Surface Mount | -55°C ~ 150°C (TJ) | - | 200V | Standard | 2 N and 2 P-Channel | - | 56pF @ 25V | 6Ohm @ 1A, 10V | 2.4V @ 1mA | - | 12-DFN (4x4) | 12-VFDFN Exposed Pad | 1,609 | |
TC1550TG-G Microchip Technology | 1 $7.9400 | Surface Mount | -55°C ~ 150°C (TJ) | - | 500V | Standard | N and P-Channel | - | 55pF @ 25V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | 2,087 | |
MSCSM120AM027CT6AG Microchip Technology | 1 $1.0000 | Chassis Mount | -40°C ~ 175°C (TJ) | 733A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 2088nC @ 20V | 27000pF @1000V | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2.97kW (Tc) | SP6C | Module | 1,850 | |
APTM10AM02FG Microchip Technology | 1 $349.8000 | Chassis Mount | -40°C ~ 150°C (TJ) | 495A | 100V | Standard | 2 N-Channel (Half Bridge) | 1360nC @ 10V | 40000pF @ 25V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1250W | SP6 | SP6 | 1,466 | |
APTM20HM08FG Microchip Technology | 1 $350.6700 | Chassis Mount | -40°C ~ 150°C (TJ) | 208A | 200V | Standard | 4 N-Channel (Half Bridge) | 280nC @ 10V | 14400pF @ 25V | 10mOhm @ 104A, 10V | 5V @ 5mA | 781W | SP6 | SP6 | 6,037 | |
APTC60TAM24TPG Microchip Technology | 1 $354.9000 | Chassis Mount | -40°C ~ 150°C (TJ) | 95A | 600V | Super Junction | 6 N-Channel (3-Phase Bridge) | 300nC @ 10V | 14400pF @ 25V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 462W | SP6-P | SP6 | 5,832 | |
APTM50AM24SCG Microchip Technology | 1 $356.3075 | Chassis Mount | -40°C ~ 150°C (TJ) | 150A | 500V | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 434nC @ 10V | 19600pF @ 25V | 28mOhm @ 75A, 10V | 5V @ 6mA | 1250W | SP6 | SP6 | 7,795 | |
APTM10HM05FG Microchip Technology | 1 $357.2650 | Chassis Mount | -40°C ~ 150°C (TJ) | 278A | 100V | Standard | 4 N-Channel (Half Bridge) | 700nC @ 10V | 20000pF @ 25V | 5mOhm @ 125A, 10V | 4V @ 5mA | 780W | SP6 | SP6 | 2,478 | |
LN100LA-G Microchip Technology | Surface Mount | -25°C ~ 125°C (TJ) | - | 1200V (1.2kV) | Standard | 2 N-Channel (Cascoded) | - | 50pF @ 25V | 3000Ohm @ 2mA, 2.8V | 1.6V @ 10µA | 350mW | 6-LFGA (3x3) | 6-VFLGA | 6,772 | ||
APTMC120AM08CD3AG Microchip Technology | Chassis Mount | -40°C ~ 150°C (TJ) | 250A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 490nC @ 20V | 9500pF @ 1000V | 10mOhm @ 200A, 20V | 2.2V @ 10mA (Typ) | 1100W | D3 | D-3 Module | 1,797 | ||
APTMC120AM16CD3AG Microchip Technology | Chassis Mount | -40°C ~ 150°C (TJ) | 131A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 246nC @ 20V | 4750pF @ 1000V | 20mOhm @ 100A, 20V | 2.2V @ 5mA (Typ) | 625W | D3 | D-3 Module | 5,670 | ||
APTMC120AM55CT1AG Microchip Technology | Chassis Mount | -40°C ~ 150°C (TJ) | 55A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 98nC @ 20V | 1900pF @ 1000V | 49mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 250W | SP1 | SP1 | 3,958 | ||
APTMC120TAM33CTPAG Microchip Technology | Chassis Mount | -40°C ~ 150°C (TJ) | 78A (Tc) | 1200V (1.2kV) | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 148nC @ 20V | 2850pF @ 1000V | 33mOhm @ 60A, 20V | 2.2V @ 3mA (Typ) | 370W | SP6-P | SP6 | 1,783 |