Transistors - Bipolar (BJT) - Single
Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
Sourcing onsemi Transistors - Bipolar (BJT) - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 6,833
| Product | Pricing | Datasheet | Mounting Type | Operating Temperature | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Transistor Type | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MJE181STU onsemi | 1 $0.6200 | Through Hole | 150°C (TJ) | 100µA (ICBO) | 50 @ 100mA, 1V | 50MHz | NPN | 1.7V @ 600mA, 3A | 3 A | 1.5 W | TO-126-3 | 60 V | TO-225AA, TO-126-3 | 7,385 | |
SBC846BWT1G onsemi | 1 $0.2000 | Surface Mount | -55°C ~ 150°C (TJ) | 15nA (ICBO) | 200 @ 2mA, 5V | 100MHz | NPN | 600mV @ 5mA, 100mA | 100 mA | 150 mW | SC-70-3 (SOT323) | 65 V | SC-70, SOT-323 | 3,930 | |
2N3962 onsemi | Through Hole | - | 10nA | 100 @ 1mA, 5V | - | PNP | 400mV @ 5mA, 50mA | 200 mA | 360 mW | TO-18 | 60 V | TO-206AA, TO-18-3 Metal Can | 3,325 | ||
MJD44H11-001 onsemi | Through Hole | -55°C ~ 150°C (TJ) | 1µA | 40 @ 4A, 1V | 85MHz | NPN | 1V @ 400mA, 8A | 8 A | 1.75 W | I-PAK | 80 V | TO-251-3 Short Leads, IPak, TO-251AA | 1,966 | ||
BC558ABU onsemi | Through Hole | 150°C (TJ) | 15nA (ICBO) | 110 @ 2mA, 5V | 150MHz | PNP | 650mV @ 5mA, 100mA | 100 mA | 500 mW | TO-92-3 | 30 V | TO-226-3, TO-92-3 (TO-226AA) | 6,791 | ||
2N7053_D26Z onsemi | Through Hole | -55°C ~ 150°C (TJ) | 200nA | 1000 @ 1A, 5V | 200MHz | NPN - Darlington | 1.5V @ 100µA, 100mA | 1.5 A | 1 W | TO-226-3 | 100 V | TO-226-3, TO-92-3 (TO-226AA) | 2,136 | ||
2SC2712GT1G onsemi | 1 $0.0200 | - | - | - | - | - | - | - | - | - | - | - | - | 4,454 | |
PN2907ANLBU onsemi | Through Hole | -55°C ~ 150°C (TJ) | 20nA (ICBO) | 100 @ 150mA, 10V | 200MHz | PNP | 1.6V @ 50mA, 500mA | 800 mA | 625 mW | TO-92-3 | 60 V | TO-226-3, TO-92-3 (TO-226AA) | 3,925 | ||
KSC2330RTA onsemi | Through Hole | 150°C (TJ) | 100nA (ICBO) | 40 @ 20mA, 10V | 50MHz | NPN | 500mV @ 1mA, 10mA | 100 mA | 1 W | TO-92-3 | 300 V | TO-226-3, TO-92-3 Long Body (Formed Leads) | 2,580 | ||
KSA1381ESTSTU onsemi | Through Hole | -55°C ~ 150°C (TJ) | 100nA (ICBO) | 100 @ 10mA, 10V | 150MHz | PNP | 600mV @ 2mA, 20mA | 100 mA | 7 W | TO-126-3 | 300 V | TO-225AA, TO-126-3 | 5,081 | ||
KSB546O onsemi | Through Hole | 150°C (TJ) | 50µA (ICBO) | 70 @ 400mA, 10V | 5MHz | PNP | 1V @ 50mA, 500mA | 2 A | 25 W | TO-220-3 | 150 V | TO-220-3 | 4,357 | ||
2N6426RLRAG onsemi | Through Hole | -55°C ~ 150°C (TJ) | 1µA | 30000 @ 100mA, 5V | - | NPN - Darlington | 1.5V @ 500µA, 500mA | 500 mA | 625 mW | TO-92 (TO-226) | 40 V | TO-226-3, TO-92-3 Long Body (Formed Leads) | 9,625 | ||
BC558BRLG onsemi | 1 $0.0900 | Through Hole | -55°C ~ 150°C (TJ) | 100nA | 180 @ 2mA, 5V | 360MHz | PNP | 650mV @ 5mA, 100mA | 100 mA | 625 mW | TO-92 (TO-226) | 30 V | TO-226-3, TO-92-3 Long Body (Formed Leads) | 4,873 | |
MMBT3416LT3 onsemi | 1 $0.0200 | - | - | - | - | - | - | - | - | - | - | - | - | 8,256 | |
BC368 onsemi | Through Hole | -55°C ~ 150°C (TJ) | 10µA (ICBO) | 85 @ 500mA, 1V | 65MHz | NPN | 500mV @ 100mA, 1A | 1 A | 625 mW | TO-92 (TO-226) | 20 V | TO-226-3, TO-92-3 Long Body | 6,976 | ||
BC559B_J35Z onsemi | Through Hole | 150°C (TJ) | 15nA (ICBO) | 200 @ 2mA, 5V | 150MHz | PNP | 650mV @ 5mA, 100mA | 100 mA | 500 mW | TO-92-3 | 30 V | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 2,672 | ||
MSB1218A-RT1G onsemi | 1 $0.2100 | Surface Mount | 150°C (TJ) | 100µA | 210 @ 2mA, 10V | - | PNP | 500mV @ 10mA, 100mA | 100 mA | 150 mW | SC-70-3 (SOT323) | 45 V | SC-70, SOT-323 | 6,812 | |
MJD18002D2T4G onsemi | Surface Mount | -65°C ~ 150°C (TJ) | 100µA | 6 @ 1A, 1V | 13MHz | NPN | 750mV @ 200mA, 1A | 2 A | 50 W | DPAK | 450 V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2,385 | ||
2SA2112-AN onsemi | Through Hole | 150°C (TJ) | 1µA (ICBO) | 200 @ 100mA, 10V | 390MHz | PNP | 700mV @ 100mA, 2A | 3 A | 1 W | 3-NMP | 50 V | SC-71 | 7,588 | ||
CPH3114-TL-E onsemi | 1 $0.1100 | Surface Mount | 150°C (TJ) | 100nA (ICBO) | 200 @ 100mA, 2V | 350MHz | PNP | 180mV @ 15mA, 750mA | 1.5 A | 900 mW | 3-CPH | 15 V | SC-96 | 9,126 |