Transistors - Bipolar (BJT) - RF
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Sourcing PANJIT Transistors - Bipolar (BJT) - RF: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 1
| Product | Pricing | Datasheet | Noise Figure (dB Typ @ f) | Mounting Type | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Transistor Type | Current - Collector (Ic) (Max) | Gain | Power - Max | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MMBT918_R1_00001 PANJIT | 1 $0.2300 | - | Surface Mount | -55°C ~ 150°C (TJ) | 20 @ 3mA, 1V | 600MHz | NPN | 50mA | - | 225mW | SOT-23 | 15V | TO-236-3, SC-59, SOT-23-3 | 5,514 |