Transistors - Bipolar (BJT) - RF

Transistors - Bipolar (BJT) - RF

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Sourcing Microchip Technology Transistors - Bipolar (BJT) - RF: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 6
ProductPricingDatasheetNoise Figure (dB Typ @ f)Mounting TypeOperating TemperatureDC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionTransistor TypeCurrent - Collector (Ic) (Max)GainPower - MaxSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Package / CaseStock & Quantity
2N2369
Microchip Technology
1
$4.0500
Datasheet
-Through Hole-65°C ~ 200°C (TJ)40 @ 10mA, 1V-NPN200mA-680mWTO-18 (TO-206AA)15VTO-206AA, TO-18-3 Metal Can
6,748
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2N3799
Microchip Technology
1
$11.4300
Datasheet
-Through Hole-65°C ~ 200°C (TJ)300 @ 500µA, 5V-NPN50mA-1.2WTO-18 (TO-206AA)60VTO-206AA, TO-18-3 Metal Can
8,899
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2N3497
Microchip Technology
1
$32.4000
Datasheet
-Through Hole-65°C ~ 200°C (TJ)40 @ 50mA, 10V150MHzPNP100mA-400mWTO-18 (TO-206AA)120VTO-206AA, TO-18-3 Metal Can
1,401
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2N3496
Microchip Technology
1
$32.4000
Datasheet
-Through Hole-65°C ~ 200°C (TJ)35 @ 100mA, 10V250MHzPNP100mA-600mWTO-18 (TO-206AA)80VTO-206AA, TO-18-3 Metal Can
6,310
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2N3495
Microchip Technology
1
$32.4000
Datasheet
-Through Hole-65°C ~ 200°C (TJ)40 @ 50mA, 10V150MHzPNP100mA-400mWTO-5AA120VTO-205AA, TO-5-3 Metal Can
8,348
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2N1725
Microchip Technology
1
$435.6000
Datasheet
-Stud Mount175°C (TJ)50 @ 2A, 15V-3 NPN5A-3WTO-6180VTO-211MA, TO-210AC, TO-61-4, Stud
3,785
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