Transistors - Bipolar (BJT) - Arrays

Transistors - Bipolar (BJT) - Arrays

Bipolar transistor arrays incorporate two or more discrete transistors in a shared package, either as electrically separate entities or with interconnections of some form between them being made inside the device package. Arrays in which the devices contained have closely matched or complementary characteristics, the co-packaged character minimizes temperature differences between devices during operation.
Sourcing NTE Electronics, Inc. Transistors - Bipolar (BJT) - Arrays: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 2
ProductPricingDatasheetMounting TypeOperating TemperatureCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionTransistor TypeVce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Power - MaxSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Package / CaseStock & Quantity
NTE912
NTE Electronics, Inc.
1
$6.5900
Datasheet
Through Hole-55°C ~ 125°C (TA)500nA40 @ 1mA, 3V550MHz5 NPN230mV @ 1mA, 10mA50mA750mW14-PDIP24V14-DIP (0.300", 7.62mm)
2,818
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NTE2018
NTE Electronics, Inc.
1
$3.6600
Datasheet
Through Hole-20°C ~ 85°C (TA)---8 NPN Darlington1.6V @ 350mA, 500A600mA1W18-PDIP50V18-DIP (0.300", 7.62mm)
3,289
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