Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Sourcing SemiQ Diodes - Rectifiers - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 55
| Product | Pricing | Datasheet | Mounting Type | Capacitance @ Vr, F | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Diode Type | Operating Temperature - Junction | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Speed | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GP3D008A065A SemiQ | 1 $2.6000 | Through Hole | 336pF @ 1V, 1MHz | 8A | 20 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 650 V | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 8,967 | |
GP3D030A120B SemiQ | 1 $15.7300 | Through Hole | 1762pF @ 1V, 1MHz | 30A | 60 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 2,153 | |
GP3D015A120B SemiQ | 1 $8.9100 | Through Hole | 962pF @ 1V, 1MHz | 15A | 30 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 4,791 | |
GP3D020A065A SemiQ | 1 $5.6924 | Through Hole | 1247pF @ 1V, 1MHz | 20A | 75 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | - | 650 V | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 8,421 | |
GP3D040A065U SemiQ | 1 $7.5767 | Through Hole | 835pF @ 1V, 1MHz | 40A | 50 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | TO-247-3 | TO-247-3 | 6,985 | |
GP3D050A065B SemiQ | 1 $11.8030 | Through Hole | 1946pF @ 1V, 1MHz | 135A | 125 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | - | 650 V | 1.6 V @ 50 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 9,605 | |
GP3D050A120B SemiQ | 1 $24.1600 | Through Hole | 3040pF @ 1V, 1MHz | 50A | 100 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 3,887 | |
GP3D005A120A SemiQ | - | - | - | - | - | - | - | - | - | - | - | - | 2,649 | ||
GP2D008A065A SemiQ | Through Hole | - | 8A | 9 µA @ 650 V | Silicon Carbide Schottky | - | 0 ns | 650 V | 1.45 V @ 30 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 3,141 | ||
GP2D008A065C SemiQ | - | - | - | - | - | - | - | - | - | - | - | - | 9,790 | ||
GP2D030A065B SemiQ | - | - | - | - | - | - | - | - | - | - | - | - | 2,525 | ||
GP3D006A065C SemiQ | - | - | - | - | - | - | - | - | - | - | - | - | 9,258 | ||
GP3D008A065C SemiQ | - | - | - | - | - | - | - | - | - | - | - | - | 1,713 | ||
GP3D010A065D SemiQ | 1 $3.4400 | - | - | 10A | - | - | - | - | 650 V | - | - | - | - | 6,936 | |
GP3D005A170B SemiQ | 1 $5.8700 | Through Hole | 347pF @ 1V, 1MHz | 21A | 20 µA @ 1700 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1700 V | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 2,856 | |
GP3D006A065A SemiQ | 1 $1.9300 | Through Hole | 229pF @ 1V, 1MHz | 20A | 15 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | - | 650 V | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | TO-220-2L | TO-220-2 | 9,067 | |
GP3D012A065A SemiQ | 1 $3.9700 | Through Hole | 572pF @ 1V, 1MHz | 12A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 650 V | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 2,456 | |
GP3D012A065B SemiQ | 1 $4.4000 | Through Hole | 572pF @ 1V, 1MHz | 12A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 650 V | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 9,404 | |
GP3D015A120A SemiQ | 1 $8.2800 | Through Hole | 962pF @ 1V, 1MHz | 15A | 30 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 8,027 | |
GP3D020A170B SemiQ | 1 $14.1600 | Through Hole | 1403pF @ 1V, 1MHz | 67A | 80 µA @ 1700 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1700 V | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 6,139 |