Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Sourcing PN Junction Semiconductor Diodes - Rectifiers - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 48
| Product | Pricing | Datasheet | Mounting Type | Capacitance @ Vr, F | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Diode Type | Operating Temperature - Junction | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Speed | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 P3D06006E2 PN Junction Semiconductor | - | - | 18A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-252-2 | TO-252-2 | 1,149 | ||
P3D06006T2 PN Junction Semiconductor | - | - | 23A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 3,547 | ||
P3D06006G2 PN Junction Semiconductor | - | - | 21A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-263-2 | TO-263-2 | 4,290 | ||
P3D06006I2 PN Junction Semiconductor | - | - | 18A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220I-2 | TO-220I-2 | 9,811 | ||
P3D06006F2 PN Junction Semiconductor | - | - | 15A | 30 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220F-2 | TO-220F-2 | 8,183 | ||
P6D12002E2 PN Junction Semiconductor | - | - | 8A | 50 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | - | No Recovery Time > 500mA (Io) | TO-252-2 | TO-252-2 | 5,337 | ||
P3D06008F2 PN Junction Semiconductor | - | - | 18A | 36 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220F-2 | TO-220F-2 | 2,832 | ||
P3D06008G2 PN Junction Semiconductor | - | - | 26A | 36 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-263-2 | TO-263-2 | 3,577 | ||
P3D06008E2 PN Junction Semiconductor | 1 $3.3300 | - | - | 22A | 36 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-252-2 | TO-252-2 | 8,392 | |
P3D06008T2 PN Junction Semiconductor | - | - | 26A | 36 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 3,228 | ||
P3D06010G2 PN Junction Semiconductor | - | - | 30A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-263-2 | TO-263-2 | 8,940 | ||
P3D06010F2 PN Junction Semiconductor | - | - | 21A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220F-2 | TO-220F-2 | 2,459 | ||
P3D06010I2 PN Junction Semiconductor | - | - | 26A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220I-2 | TO-220I-2 | 2,475 | ||
P3D06010T2 PN Junction Semiconductor | - | - | 30A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 3,997 | ||
P3D06010E2 PN Junction Semiconductor | - | - | 28A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 650 V | - | No Recovery Time > 500mA (Io) | TO-252-2 | TO-252-2 | 2,561 | ||
P3D12005E2 PN Junction Semiconductor | - | - | 19A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | - | No Recovery Time > 500mA (Io) | TO-252-2 | TO-252-2 | 6,324 | ||
P3D12005T2 PN Junction Semiconductor | - | - | 21A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | - | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 9,469 | ||
P3D12005K2 PN Junction Semiconductor | - | - | 23A | 44 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | - | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 9,376 | ||
P3D12040K3 PN Junction Semiconductor | - | - | 92A | 60 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | - | No Recovery Time > 500mA (Io) | TO-247-3 | TO-247-3 | 4,281 | ||
P3D12040K2 PN Junction Semiconductor | - | - | 93A | 70 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | - | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 4,787 |