Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Sourcing Inventchip Technology Diodes - Rectifiers - Single: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 7
| Product | Pricing | Datasheet | Mounting Type | Capacitance @ Vr, F | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Diode Type | Operating Temperature - Junction | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Speed | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 IV1D06006O2 Inventchip Technology | 1 $4.3700 | Through Hole | 212pF @ 1V, 1MHz | 17.4A | 10 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 650 V | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 9,607 | |
IV1D06006P3 Inventchip Technology | 1 $4.4000 | Surface Mount | 224pF @ 1V, 1MHz | 16.7A | 10 µA @ 650 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 650 V | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,297 | |
IV1D12005O2 Inventchip Technology | 1 $6.5400 | Through Hole | 320pF @ 1V, 1MHz | 17A | 30 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 2,646 | |
IV1D12010O2 Inventchip Technology | 1 $11.7800 | Through Hole | 575pF @ 1V, 1MHz | 28A | 50 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | TO-220-2 | TO-220-2 | 8,509 | |
IV1D12010T2 Inventchip Technology | 1 $11.7800 | Through Hole | 575pF @ 1V, 1MHz | 30A | 50 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 0 ns | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 5,022 | |
IV1D12015T2 Inventchip Technology | 1 $14.5500 | Through Hole | 888pF @ 1V, 1MHz | 44A | 80 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 7,585 | |
IV1D12020T2 Inventchip Technology | 1 $19.1700 | Through Hole | 1114pF @ 1V, 1MHz | 54A | 120 µA @ 1200 V | Silicon Carbide Schottky | -55°C ~ 175°C | 0 ns | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | TO-247-2 | TO-247-2 | 8,899 |