Diodes - Rectifiers - Arrays
Products within the diode and rectifier array family incorporate two or more discrete diodes within a single package. They are characterized in terms similar to those used for single discrete diodes, with the addition of a "Diode Configuration" attribute indicating the presence and character of any internal connections between the diodes in the device. Note that arrays with a full-bridge configuration are specifically excluded, and listed as a separate product family.
Sourcing GeneSiC Semiconductor Diodes - Rectifiers - Arrays: in-stock lines for quick ship, BOM matching for multi-line builds, and original-channel screening — not keyword stuffing.
Product List
Total Components: 920
| Product | Pricing | Datasheet | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Mounting Type | Current - Reverse Leakage @ Vr | Diode Type | Operating Temperature - Junction | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Speed | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MURT40060R GeneSiC Semiconductor | 1 Pair Common Anode | 200A | Chassis Mount | 25 µA @ 50 V | Standard | -55°C ~ 150°C | 240 ns | 600 V | 1.7 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 4,728 | ||
MBRTA60020 GeneSiC Semiconductor | 1 Pair Common Cathode | 300A | Chassis Mount | 1 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 20 V | 700 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 9,291 | ||
MBRTA600200 GeneSiC Semiconductor | 1 Pair Common Cathode | 300A | Chassis Mount | 4 mA @ 200 V | Schottky | -55°C ~ 150°C | - | 200 V | 920 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 6,096 | ||
MBRTA600200R GeneSiC Semiconductor | 1 Pair Common Anode | 300A | Chassis Mount | 4 mA @ 200 V | Schottky | -55°C ~ 150°C | - | 200 V | 920 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 1,606 | ||
MBRTA60020L GeneSiC Semiconductor | 1 Pair Common Cathode | 300A | Chassis Mount | 3 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 20 V | 580 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 6,744 | ||
MBRTA60020R GeneSiC Semiconductor | 1 Pair Common Anode | 300A | Chassis Mount | 3 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 20 V | 580 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 9,903 | ||
MBR30035CTR GeneSiC Semiconductor | 1 $108.7000 | 1 Pair Common Anode | 150A | Chassis Mount | 1 mA @ 35 V | Schottky, Reverse Polarity | -55°C ~ 150°C | - | 35 V | 700 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | Twin Tower | Twin Tower | 5,189 | |
MBR40040CTR GeneSiC Semiconductor | 1 $113.2500 | 1 Pair Common Anode | 200A | Chassis Mount | 5 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 40 V | 650 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | Twin Tower | Twin Tower | 6,482 | |
MBRT30035R GeneSiC Semiconductor | 1 $122.1900 | 1 Pair Common Anode | 150A | Chassis Mount | 1 mA @ 20 V | Schottky, Reverse Polarity | -55°C ~ 150°C | - | 35 V | 750 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 6,781 | |
MBRT30040R GeneSiC Semiconductor | 1 $122.1900 | 1 Pair Common Anode | 150A | Chassis Mount | 1 mA @ 20 V | Schottky, Reverse Polarity | -55°C ~ 150°C | - | 40 V | 750 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 4,462 | |
MBR2X060A150 GeneSiC Semiconductor | 1 $46.9860 | 2 Independent | 60A | Chassis Mount | 3 mA @ 150 V | Schottky | -40°C ~ 150°C | - | 150 V | 880 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227 | SOT-227-4, miniBLOC | 1,113 | |
MBR2X060A180 GeneSiC Semiconductor | 1 $46.9860 | 2 Independent | 60A | Chassis Mount | 3 mA @ 180 V | Schottky | -40°C ~ 150°C | - | 180 V | 920 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227 | SOT-227-4, miniBLOC | 1,249 | |
MBR2X060A200 GeneSiC Semiconductor | 1 $46.9860 | 2 Independent | 60A | Chassis Mount | 3 mA @ 200 V | Schottky | -40°C ~ 150°C | - | 200 V | 920 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227 | SOT-227-4, miniBLOC | 1,910 | |
MUR2X060A10 GeneSiC Semiconductor | 1 $46.9860 | 2 Independent | 60A | Chassis Mount | 25 µA @ 1000 V | Standard | -55°C ~ 175°C | - | 1000 V | 2.35 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | SOT-227 | SOT-227-4, miniBLOC | 4,800 | |
MUR2X060A12 GeneSiC Semiconductor | 1 $46.9860 | 2 Independent | 60A | Chassis Mount | 25 µA @ 1200 V | Standard | -55°C ~ 175°C | - | 1200 V | 2.35 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | SOT-227 | SOT-227-4, miniBLOC | 8,274 | |
MBRT60040R GeneSiC Semiconductor | 1 $140.2020 | 1 Pair Common Anode | 300A | Chassis Mount | 1 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 40 V | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 3,354 | |
MBRT60045 GeneSiC Semiconductor | 1 $140.2020 | 1 Pair Common Cathode | 300A | Chassis Mount | 1 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 45 V | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 9,397 | |
MBRT60045R GeneSiC Semiconductor | 1 $140.2020 | 1 Pair Common Anode | 300A | Chassis Mount | 1 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 45 V | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 8,923 | |
MBRT60060 GeneSiC Semiconductor | 1 $140.2020 | 1 Pair Common Cathode | 300A | Chassis Mount | 1 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 60 V | 800 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 6,423 | |
MBRT60060R GeneSiC Semiconductor | 1 $140.2020 | 1 Pair Common Anode | 300A | Chassis Mount | 1 mA @ 20 V | Schottky | -55°C ~ 150°C | - | 60 V | 800 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Three Tower | 4,350 |